Molecular Beam Epitaxial Growths of SnTe (111) Layers Grown on InP (111)A Substrate Using Interfacial Misfit Array
The following data packages details the growth parameters, preparation steps, and characterization results of the samples listed in the manuscript titled "Growth Conditions and Interfacial Misfit Array in SnTe (111) films Grown on InP (111) A Substrates by Molecular Beam Epitaxy". This study provide a detailed investigation of the MBE growth parameters, including substrate temperature, Te:Sn flux ratios and film growth rate, for the synthesis of high-quality SnTe (111) films on lattice-mismatched InP (111)A substrate. Single-crystalline SnTe (111) film with root-mean-square roughness as low as 0.2 nm and 0.09° FWHM in SnTe (222) rocking curve, has been obtained. The as-obtained SnTe (111) layer is also fully relaxed, where the relaxation mechanism is delivered by the formation of a periodic interfacial misfit (IMF) dislocation array at the SnTe/InP heterointerface. This is the first report of IMF array at a rock-salt on zinc-blende material system, as well as the hetero-integration between IV-VI and III-V semiconductor.
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Work Title | Molecular Beam Epitaxial Growths of SnTe (111) Layers Grown on InP (111)A Substrate Using Interfacial Misfit Array |
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Subtitle | Materials Science |
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License | CC BY 4.0 (Attribution) |
Work Type | Dataset |
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Publication Date | August 21, 2024 |
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DOI | doi:10.26207/k2f9-ry44 |
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Deposited | August 21, 2024 |
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