Molecular Beam Epitaxial Growths of SnTe (111) Layers Grown on InP (111)A Substrate Using Interfacial Misfit Array

The following data packages details the growth parameters, preparation steps, and characterization results of the samples listed in the manuscript titled "Growth Conditions and Interfacial Misfit Array in SnTe (111) films Grown on InP (111) A Substrates by Molecular Beam Epitaxy". This study provide a detailed investigation of the MBE growth parameters, including substrate temperature, Te:Sn flux ratios and film growth rate, for the synthesis of high-quality SnTe (111) films on lattice-mismatched InP (111)A substrate. Single-crystalline SnTe (111) film with root-mean-square roughness as low as 0.2 nm and 0.09° FWHM in SnTe (222) rocking curve, has been obtained. The as-obtained SnTe (111) layer is also fully relaxed, where the relaxation mechanism is delivered by the formation of a periodic interfacial misfit (IMF) dislocation array at the SnTe/InP heterointerface. This is the first report of IMF array at a rock-salt on zinc-blende material system, as well as the hetero-integration between IV-VI and III-V semiconductor.

Citation

Zhang, Qihua; Hilse, Maria (2024). Molecular Beam Epitaxial Growths of SnTe (111) Layers Grown on InP (111)A Substrate Using Interfacial Misfit Array [Data set]. Scholarsphere. https://doi.org/10.26207/k2f9-ry44

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Work Title Molecular Beam Epitaxial Growths of SnTe (111) Layers Grown on InP (111)A Substrate Using Interfacial Misfit Array
Subtitle Materials Science
Access
Open Access
Creators
  1. Qihua Zhang
  2. Maria Hilse
Keyword
  1. MBE
  2. Interfacial Misfit Array
  3. IV-VI semiconductor
  4. heterogeneous integration
  5. SnTe on InP
  6. Thin Film
License CC BY 4.0 (Attribution)
Work Type Dataset
Acknowledgments
  1. NSF Cooperative Agreement DMR-2039351
Publisher
  1. 2D Crystal Consortium
Publication Date August 21, 2024
Subject
  1. Materials Science
DOI doi:10.26207/k2f9-ry44
Related URLs
Deposited August 21, 2024

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Version 1
published

  • Created
  • Updated
  • Updated Description, Publication Date Show Changes
    Description
    • The following data packages details the growth parameters, preparation steps, and characterization results of the samples listed in the manuscript titled "Growth Conditions and Interfacial Misfit Array in SnTe (111) films Grown on InP (111) A Substrates by Molecular Beam Epitaxy". This study provide a detailed investigation of the MBE growth parameters, including substrate temperature, Te:Sn flux ratios and film growth rate, for the synthesis of high-quality SnTe (111) films on lattice-mismatched InP (111)A substrate. Single-crystalline SnTe (111) film with root-mean-square roughness as low as 0.2 nm and 0.09° FWHM in SnTe (222) rocking curve, has been obtained. The as-obtained SnTe (111) layer is also fully relaxed, where the relaxation mechanism is delivered by the formation of a periodic interfacial misfit (IMF) dislocation array at the SnTe/InP heterointerface. This is the first report of IMF array at a rock-salt on zinc-blende material system, as well as the hetero-integration between IV-VI and III-V semiconductor.
    Publication Date
    • 2024-08-21
  • Updated Acknowledgments Show Changes
    Acknowledgments
    • NSF Cooperative Agreement DMR-2039351
  • Added Creator Qihua Zhang
  • Added Creator Maria Hilse
  • Updated Keyword, Subject, Subtitle, and 2 more Show Changes
    Keyword
    • MBE, Interfacial Misfit Array, IV-VI semiconductor, heterointegration, SnTe on InP
    Subject
    • Materials Science
    Subtitle
    • Materials Science
    Publisher
    • 2D Crystal Consortium
    Related URLs
    • https://data.2dccmip.org/aN3h8cyZuPAP
  • Updated Keyword Show Changes
    Keyword
    • MBE, Interfacial Misfit Array, IV-VI semiconductor, heterointegration, SnTe on InP
    • MBE, Interfacial Misfit Array, IV-VI semiconductor, heterointegration, SnTe on InP, Thin Film
  • Updated Related URLs Show Changes
    Related URLs
    • https://data.2dccmip.org/aN3h8cyZuPAP
    • https://data.2dccmip.org/aN3h8cyZuPAP, https://doi.org/10.60551/gqq8-yj90
  • Added MBE2-240109A-QZ.zip
  • Added MBE2-231019B-QZ.zip
  • Added MBE2-231018A-QZ.zip
  • Added MBE2-231018B-QZ.zip
  • Added MBE2-231017B-QZ.zip
  • Added MBE2-231017C-QZ.zip
  • Added MBE2-231017A-QZ.zip
  • Added MBE2-230811A-MH.zip
  • Added MBE2-230808E-MH.zip
  • Added MBE2-230808D-MH.zip
  • Added MBE2-230808C-MH.zip
  • Added MBE2-230808B-MH.zip
  • Added Readme.txt
  • Updated License Show Changes
    License
    • https://creativecommons.org/licenses/by/4.0/
  • Published

Version 2
published

  • Created
  • Updated Keyword Show Changes
    Keyword
    • MBE, Interfacial Misfit Array, IV-VI semiconductor, heterointegration, SnTe on InP, Thin Film
    • MBE, Interfacial Misfit Array, IV-VI semiconductor, heterogeneous integration , SnTe on InP, Thin Film
  • Published
  • Updated