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Quasi-Van der Waals Epitaxial Growth of γ′-GaSe Nanometer-Thick Films on GaAs(111)B Substrates

GaSe is an important member of the post-transition-metal chalcogenide family and is an emerging two-dimensional (2D) semiconductor material. Because it is a van der Waals material, it can be fabricated into atomic-scale ultrathin films, making it suitable for the preparation of compact, heterostructure devices. In addition, GaSe possesses unusual optical and electronic properties, such as a shift from an indirect-bandgap single-layer film to a direct-bandgap bulk material, rare intrinsic p-type conduction, and nonlinear optical behaviors. These properties make GaSe an appealing candidate for the fabrication of field-effect transistors, photodetectors, and photovoltaics. However, the wafer-scale production of pure GaSe single-crystal thin films remains challenging. This study develops an approach for the direct growth of nanometer-thick GaSe films on GaAs substrates by using molecular beam epitaxy. It yields smooth thin GaSe films with a rare γ′-polymorph. We analyze the formation mechanism of γ′-GaSe using density-functional theory and speculate that it is stabilized by Ga vacancies since the formation enthalpy of γ′-GaSe tends to become lower than that of other polymorphs when the Ga vacancy concentration increases. Finally, we investigate the growth conditions of GaSe, providing valuable insights for exploring 2D/three-dimensional (3D) quasi-van der Waals epitaxial growth.

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Work Title Quasi-Van der Waals Epitaxial Growth of γ′-GaSe Nanometer-Thick Films on GaAs(111)B Substrates
Access
Open Access
Creators
  1. Mingyu Yu
  2. Sahani Amaya Iddawela
  3. Jiayang Wang
  4. Maria Hilse
  5. Jessica L. Thompson
  6. Danielle Reifsnyder Hickey
  7. Susan B. Sinnott
  8. Stephanie Law
Keyword
  1. γ'-GaSe
  2. Quasi-van der Waals epitaxy
  3. Two-dimensional materials
  4. Wafer-scale synthesis
  5. Nanometer-thick
License CC BY-NC-ND 4.0 (Attribution-NonCommercial-NoDerivatives)
Work Type Article
Publisher
  1. ACS Nano
Publication Date June 13, 2024
Subject
  1. Crystallization
  2. Epitaxy
  3. Fluxes
  4. Gases
  5. Layers
Publisher Identifier (DOI)
  1. https://doi.org/10.1021/acsnano.4c04194
Deposited November 25, 2024

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Work History

Version 1
published

  • Created

    November 25, 2024 10:19 by sal6149

  • Updated

    November 25, 2024 10:19 by [unknown user]

  • Added Creator Mingyu Yu

    November 25, 2024 10:19 by sal6149

  • Added Creator Sahani Amaya Iddawela

    November 25, 2024 10:19 by sal6149

  • Added Creator Jiayang Wang

    November 25, 2024 10:19 by sal6149

  • Added Creator Maria Hilse

    November 25, 2024 10:19 by sal6149

  • Added Creator Jessica L. Thompson

    November 25, 2024 10:19 by sal6149

  • Added Creator Danielle Reifsnyder Hickey

    November 25, 2024 10:19 by sal6149

  • Added Creator Susan B. Sinnott

    November 25, 2024 10:19 by sal6149

  • Added Creator Stephanie Law

    November 25, 2024 10:19 by sal6149

  • Updated Work Title, Publisher, Publisher Identifier (DOI), and 3 more Show Changes

    November 25, 2024 10:19 by sal6149

    Work Title
    • Quasi-van der Waals Epitaxial Growth of γ'-GaSe Thin Films on GaAs(111)B Substrates
    • Quasi-Van der Waals Epitaxial Growth of γ′-GaSe Nanometer-Thick Films on GaAs(111)B Substrates
    Publisher
    • ACS Nano
    Publisher Identifier (DOI)
    • https://doi.org/10.1021/acsnano.4c04194
    Related URLs
    • http://arxiv.org/pdf/2403.12265
    Description
    • <p>GaSe is an important member of the post-transition-metal chalcogenide family and is an emerging two-dimensional (2D) semiconductor material. Because it is a van der Waals material, it can be fabricated into atomic-scale ultrathin films, making it suitable for the preparation of compact, heterostructure devices. In addition, GaSe possesses unusual optical and electronic properties, such as a shift from an indirect-bandgap single-layer film to a direct-bandgap bulk material, rare intrinsic p-type conduction, and nonlinear optical behaviors. These properties make GaSe an appealing candidate for the fabrication of field-effect transistors, photodetectors, and photovoltaics. However, the wafer-scale production of pure GaSe single-crystal thin films remains challenging. This study develops an approach for the direct growth of nanometer-thick GaSe films on GaAs substrates by using molecular beam epitaxy. It yields smooth thin GaSe films with a rare γ′-polymorph. We analyze the formation mechanism of γ′-GaSe using density-functional theory and speculate that it is stabilized by Ga vacancies since the formation enthalpy of γ′-GaSe tends to become lower than that of other polymorphs when the Ga vacancy concentration increases. Finally, we investigate the growth conditions of GaSe, providing valuable insights for exploring 2D/three-dimensional (3D) quasi-van der Waals epitaxial growth.</p>
    Publication Date
    • 2024-07-02
  • Updated

    November 25, 2024 10:19 by sal6149

  • Updated

    November 25, 2024 10:19 by sal6149

  • Updated Creator Mingyu Yu

    November 25, 2024 10:19 by sal6149

  • Updated Creator Sahani Amaya Iddawela

    November 25, 2024 10:19 by sal6149

  • Updated Creator Jiayang Wang

    November 25, 2024 10:19 by sal6149

  • Updated Creator Maria Hilse

    November 25, 2024 10:19 by sal6149

  • Updated Creator Jessica L. Thompson

    November 25, 2024 10:19 by sal6149

  • Updated Creator Danielle Reifsnyder Hickey

    November 25, 2024 10:19 by sal6149

  • Updated Creator Susan B. Sinnott

    November 25, 2024 10:19 by sal6149

  • Updated Creator Stephanie Law

    November 25, 2024 10:19 by sal6149

  • Added main_SI.pdf

    November 25, 2024 10:22 by sal6149

  • Updated License Show Changes

    November 25, 2024 10:22 by sal6149

    License
    • https://creativecommons.org/licenses/by-nc-nd/4.0/
  • Published

    November 25, 2024 10:22 by sal6149

  • Updated

    November 25, 2024 21:04 by [unknown user]

  • Updated Keyword, Subject, Related URLs, and 1 more Show Changes

    October 17, 2025 10:28 by jts5573

    Keyword
    • γ'-GaSe , Quasi-van der Waals epitaxy , Two-dimensional materials , Wafer-scale synthesis , Nanometer-thick
    Subject
    • Crystallization , Epitaxy , Fluxes , Gases , Layers
    Related URLs
    • http://arxiv.org/pdf/2403.12265
    Publication Date
    • 2024-07-02
    • 2024-06-13