
Treatment and Aging Studies of GaAs(111)B Substrates for van der Waals Chalcogenide Film Growth
GaAs(111)B is a widely used substrate. Using MBE technology, wafer-scale high-quality crystal films can be grown on GaAs(111)B substrates. However, there're still two main obstacles: first, the surface dangling bonds hinder its use for growth with lattice mismatch; second, the As-terminated surface is prone to aging in the air, thereby affecting subsequent growth. Out study optimize the thermal treatment method to deoxidize and passivate GaAs(111)B under Se in MBE chamber. It results in a flat, deoxidized, and passivated surface with high reproducibility. We also find that the Se-passivation process is most likely to yield a surface composed of a mixture of 25 % As and 75 % Se atoms through first-principal calculations. Finally, the storage method using food-grade vacuum packaging cannot fully prevent aging. Even after undergoing deoxidation/Se passivation, the aged substrate still influences the subsequent sample growth. So, we suggest to use storage with nitrogen purged containers to preserve GaAs(111)B wafers.
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Work Title | Treatment and Aging Studies of GaAs(111)B Substrates for van der Waals Chalcogenide Film Growth |
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Subtitle | Materials Science |
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License | CC BY 4.0 (Attribution) |
Work Type | Dataset |
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Publication Date | March 19, 2024 |
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DOI | doi:10.26207/gaj0-fr56 |
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Deposited | March 19, 2024 |
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