Treatment and Aging Studies of GaAs(111)B Substrates for van der Waals Chalcogenide Film Growth
GaAs(111)B is a widely used substrate. Using MBE technology, wafer-scale high-quality crystal films can be grown on GaAs(111)B substrates. However, there're still two main obstacles: first, the surface dangling bonds hinder its use for growth with lattice mismatch; second, the As-terminated surface is prone to aging in the air, thereby affecting subsequent growth. Out study optimize the thermal treatment method to deoxidize and passivate GaAs(111)B under Se in MBE chamber. It results in a flat, deoxidized, and passivated surface with high reproducibility. We also find that the Se-passivation process is most likely to yield a surface composed of a mixture of 25 % As and 75 % Se atoms through first-principal calculations. Finally, the storage method using food-grade vacuum packaging cannot fully prevent aging. Even after undergoing deoxidation/Se passivation, the aged substrate still influences the subsequent sample growth. So, we suggest to use storage with nitrogen purged containers to preserve GaAs(111)B wafers.
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Work Title Treatment and Aging Studies of GaAs(111)B Substrates for van der Waals Chalcogenide Film Growth Subtitle Materials Science Access Creators - Mingyu Yu
- Molly Rose McDonough
- Sahani Amaya Iddawela
- Jessica Lorraine Thompson
Keyword - MBE
- GaAs(111)B
License CC BY 4.0 (Attribution) Work Type Dataset Acknowledgments - NSF Cooperative Agreement DMR-2039351
Publisher - 2D Crystal Consortium
Publication Date March 19, 2024 Subject - Materials Science
DOI doi:10.26207/gaj0-fr56 Related URLs Deposited March 19, 2024 Versions
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Version 1
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Updated Keyword, Subject, Publisher, and 3 more Show ChangesKeywordSubject
- MBE, GaAs(111)B
Publisher- Materials Science
Subtitle- 2D Crystal Consortium
Description- Materials Science
Publication Date- GaAs(111)B is a widely used substrate. Using MBE technology, wafer-scale high-quality crystal films can be grown on GaAs(111)B substrates. However, there're still two main obstacles: first, the surface dangling bonds hinder its use for growth with lattice mismatch; second, the As-terminated surface is prone to aging in the air, thereby affecting subsequent growth. Out study optimize the thermal treatment method to deoxidize and passivate GaAs(111)B under Se in MBE chamber. It results in a flat, deoxidized, and passivated surface with high reproducibility. We also find that the Se-passivation process is most likely to yield a surface composed of a mixture of 25 % As and 75 % Se atoms through first-principal calculations. Finally, the storage method using food-grade vacuum packaging cannot fully prevent aging. Even after undergoing deoxidation/Se passivation, the aged substrate still influences the subsequent sample growth. So, we suggest to use storage with nitrogen purged containers to preserve GaAs(111)B wafers.
- 2024-03-19
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Updated Acknowledgments Show ChangesAcknowledgments
- NSF Cooperative Agreement DMR-2039351
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Added Creator Mingyu Yu
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- https://creativecommons.org/licenses/by/4.0/
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Added Creator Molly Rose McDonough
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Added Creator Sahani Amaya Iddawela
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- http://data.2dccmip.org/10.26207/gaj0-fr56
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http://data.2dccmip.org/10.26207/gaj0-fr56- http://data.2dccmip.org/10.26207/gaj0-fr56, https://doi.org/10.60551/gqq8-yj90
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http://data.2dccmip.org/10.26207/gaj0-fr56, https://doi.org/10.60551/gqq8-yj90- http://data.2dccmip.org/10.26207/gaj0-fr56, https://doi.org/10.60551/gqq8-yj90, https://doi.org/10.1116/6.0003470
