Treatment and Aging Studies of GaAs(111)B Substrates for van der Waals Chalcogenide Film Growth

GaAs(111)B is a widely used substrate. Using MBE technology, wafer-scale high-quality crystal films can be grown on GaAs(111)B substrates. However, there're still two main obstacles: first, the surface dangling bonds hinder its use for growth with lattice mismatch; second, the As-terminated surface is prone to aging in the air, thereby affecting subsequent growth. Out study optimize the thermal treatment method to deoxidize and passivate GaAs(111)B under Se in MBE chamber. It results in a flat, deoxidized, and passivated surface with high reproducibility. We also find that the Se-passivation process is most likely to yield a surface composed of a mixture of 25 % As and 75 % Se atoms through first-principal calculations. Finally, the storage method using food-grade vacuum packaging cannot fully prevent aging. Even after undergoing deoxidation/Se passivation, the aged substrate still influences the subsequent sample growth. So, we suggest to use storage with nitrogen purged containers to preserve GaAs(111)B wafers.

Citation

Yu, Mingyu; McDonough, Molly; Iddawela, Sahani; Thompson, Jessica (2024). Treatment and Aging Studies of GaAs(111)B Substrates for van der Waals Chalcogenide Film Growth [Data set]. Scholarsphere. https://doi.org/10.26207/gaj0-fr56

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Work Title Treatment and Aging Studies of GaAs(111)B Substrates for van der Waals Chalcogenide Film Growth
Subtitle Materials Science
Access
Open Access
Creators
  1. Mingyu Yu
  2. Molly Rose McDonough
  3. Sahani Amaya Iddawela
  4. Jessica Lorraine Thompson
Keyword
  1. MBE
  2. GaAs(111)B
License CC BY 4.0 (Attribution)
Work Type Dataset
Acknowledgments
  1. NSF Cooperative Agreement DMR-2039351
Publisher
  1. 2D Crystal Consortium
Publication Date March 19, 2024
Subject
  1. Materials Science
DOI doi:10.26207/gaj0-fr56
Related URLs
Deposited March 19, 2024

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Version 1
published

  • Created
  • Updated
  • Updated Keyword, Subject, Publisher, and 3 more Show Changes
    Keyword
    • MBE, GaAs(111)B
    Subject
    • Materials Science
    Publisher
    • 2D Crystal Consortium
    Subtitle
    • Materials Science
    Description
    • GaAs(111)B is a widely used substrate. Using MBE technology, wafer-scale high-quality crystal films can be grown on GaAs(111)B substrates. However, there're still two main obstacles: first, the surface dangling bonds hinder its use for growth with lattice mismatch; second, the As-terminated surface is prone to aging in the air, thereby affecting subsequent growth. Out study optimize the thermal treatment method to deoxidize and passivate GaAs(111)B under Se in MBE chamber. It results in a flat, deoxidized, and passivated surface with high reproducibility. We also find that the Se-passivation process is most likely to yield a surface composed of a mixture of 25 % As and 75 % Se atoms through first-principal calculations. Finally, the storage method using food-grade vacuum packaging cannot fully prevent aging. Even after undergoing deoxidation/Se passivation, the aged substrate still influences the subsequent sample growth. So, we suggest to use storage with nitrogen purged containers to preserve GaAs(111)B wafers.
    Publication Date
    • 2024-03-19
  • Updated Acknowledgments Show Changes
    Acknowledgments
    • NSF Cooperative Agreement DMR-2039351
  • Added Creator Mingyu Yu
  • Added MBE2-230924A-MY.zip
  • Added MBE2-230722A-MY.zip
  • Added MBE2-230707C-MY.zip
  • Added MBE2-230718B-MY.zip
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  • Added MBE2-230511A-MY.zip
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  • Updated License Show Changes
    License
    • https://creativecommons.org/licenses/by/4.0/
  • Added Readme.txt
  • Added Creator Molly Rose McDonough
  • Added Creator Sahani Amaya Iddawela
  • Added Creator Jessica Lorraine Thompson
  • Published
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Version 2
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  • Updated Related URLs Show Changes
    Related URLs
    • http://data.2dccmip.org/10.26207/gaj0-fr56
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Version 3
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  • Updated Related URLs Show Changes
    Related URLs
    • http://data.2dccmip.org/10.26207/gaj0-fr56
    • http://data.2dccmip.org/10.26207/gaj0-fr56, https://doi.org/10.60551/gqq8-yj90
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