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Created
November 25, 2024 10:23
by
sal6149
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Updated
November 25, 2024 10:23
by
[unknown user]
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Added Creator Mingyu Yu
November 25, 2024 10:23
by
sal6149
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Added Creator Jiayang Wang
November 25, 2024 10:23
by
sal6149
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Added Creator Sahani A. Iddawela
November 25, 2024 10:23
by
sal6149
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Added Creator Molly McDonough
November 25, 2024 10:23
by
sal6149
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Added Creator Jessica L. Thompson
November 25, 2024 10:23
by
sal6149
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Added Creator Susan B. Sinnott
November 25, 2024 10:23
by
sal6149
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Added Creator Danielle Reifsnyder Hickey
November 25, 2024 10:23
by
sal6149
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Added Creator Stephanie Law
November 25, 2024 10:23
by
sal6149
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Updated
Publisher, Publisher Identifier (DOI), Related URLs, and 2 more
Show Changes
November 25, 2024 10:23
by
sal6149
Publisher
- Journal of Vacuum Science and Technology B
Publisher Identifier (DOI)
- https://doi.org/10.1116/6.0003470
Related URLs
- https://pubs.aip.org/avs/jvb/article-pdf/doi/10.1116/6.0003470/19854869/033201_1_6.0003470.pdf
Description
- <p>GaAs(111)B are commercially available substrates widely used for the growth of van der Waals chalcogenide films. Wafer-scale, high-quality crystalline films can be deposited on GaAs(111)B substrates using molecular beam epitaxy. However, two obstacles persist in the use of GaAs(111)B: first, the surface dangling bonds make it challenging for the growth of van der Waals materials; second, the As-terminated surface is prone to aging in air. This study investigated a thermal treatment method for deoxidizing GaAs(111)B substrates while simultaneously passivating the surface dangling bonds with Se. By optimizing the treatment parameters, we obtained a flat and completely deoxidized platform for subsequent film growth, with highly reproducible operations. Furthermore, through first-principle calculations, we find that the most energetically favorable surface of GaAs(111)B after Se passivation consists of 25% As atoms and 75% Se atoms. Finally, we discovered that the common storage method using food-grade vacuum packaging cannot completely prevent substrate aging, and even after thermal treatment, aging still affects subsequent growth. Therefore, we recommend using N<sub>2</sub>-purged containers for better preservation.</p>
Publication Date
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Updated
November 25, 2024 10:23
by
sal6149
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Updated
November 25, 2024 10:23
by
sal6149
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Updated Creator Mingyu Yu
November 25, 2024 10:23
by
sal6149
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Updated Creator Jiayang Wang
November 25, 2024 10:23
by
sal6149
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Updated Creator Sahani A. Iddawela
November 25, 2024 10:23
by
sal6149
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Updated Creator Molly McDonough
November 25, 2024 10:23
by
sal6149
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Updated Creator Jessica L. Thompson
November 25, 2024 10:23
by
sal6149
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Updated Creator Susan B. Sinnott
November 25, 2024 10:23
by
sal6149
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Updated Creator Danielle Reifsnyder Hickey
November 25, 2024 10:23
by
sal6149
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Updated Creator Stephanie Law
November 25, 2024 10:23
by
sal6149
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Added
main_SI.pdf
November 25, 2024 10:25
by
sal6149
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November 25, 2024 10:25
by
sal6149
Description
<p>GaAs(111)B are commercially available substrates widely used for the growth of van der Waals chalcogenide films. Wafer-scale, high-quality crystalline films can be deposited on GaAs(111)B substrates using molecular beam epitaxy. However, two obstacles persist in the use of GaAs(111)B: first, the surface dangling bonds make it challenging for the growth of van der Waals materials; second, the As-terminated surface is prone to aging in air. This study investigated a thermal treatment method for deoxidizing GaAs(111)B substrates while simultaneously passivating the surface dangling bonds with Se. By optimizing the treatment parameters, we obtained a flat and completely deoxidized platform for subsequent film growth, with highly reproducible operations. Furthermore, through first-principle calculations, we find that the most energetically favorable surface of GaAs(111)B after Se passivation consists of 25% As atoms and 75% Se atoms. Finally, we discovered that the common storage method using food-grade vacuum packaging cannot completely prevent substrate aging, and even after thermal treatment, aging still affects subsequent growth. Therefore, we recommend using N<sub>2</sub>-purged containers for better preservation.</p>
- GaAs(111)B are commercially available substrates widely used for the growth of van der Waals chalcogenide films. Wafer-scale, high-quality crystalline films can be deposited on GaAs(111)B substrates using molecular beam epitaxy. However, two obstacles persist in the use of GaAs(111)B: first, the surface dangling bonds make it challenging for the growth of van der Waals materials; second, the As-terminated surface is prone to aging in air. This study investigated a thermal treatment method for deoxidizing GaAs(111)B substrates while simultaneously passivating the surface dangling bonds with Se. By optimizing the treatment parameters, we obtained a flat and completely deoxidized platform for subsequent film growth, with highly reproducible operations. Furthermore, through first-principle calculations, we find that the most energetically favorable surface of GaAs(111)B after Se passivation consists of 25% As atoms and 75% Se atoms. Finally, we discovered that the common storage method using food-grade vacuum packaging cannot completely prevent substrate aging, and even after thermal treatment, aging still affects subsequent growth. Therefore, we recommend using N<sub>2</sub>-purged containers for better preservation.
License
- https://creativecommons.org/licenses/by-nc-nd/4.0/
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Published
November 25, 2024 10:25
by
sal6149
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Updated
November 25, 2024 21:04
by
[unknown user]