Monolithic three-dimensional integration of complementary two-dimensional field effect transistors

This data package includes information on growth conditions and characterization results for TMD films used in the fabrication of 3D integrated 2-tier CMOS integrated circuits by Prof. Saptarshi Das' group at Penn State. The TMD films of WSe2 multi-layer films grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility. The data includes recipe files from the MOCVD equipment and data files from atomic force microscopy (AFM) and room temperature photoluminescence and Raman spectroscopy carried out on the samples. Characterization is typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from wafer edge on opposite side to the flat).

Citation

Redwing, Joan; Chen, Chen; Kumari, Shalini (2024). Monolithic three-dimensional integration of complementary two-dimensional field effect transistors [Data set]. Scholarsphere. https://doi.org/10.26207/x074-bw26

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Work Title Monolithic three-dimensional integration of complementary two-dimensional field effect transistors
Subtitle Materials Science
Access
Open Access
Creators
  1. Joan Redwing
  2. Chen Chen
  3. Shalini Kumari
Keyword
  1. MOCVD
  2. WSe2
  3. Sapphire
License CC BY 4.0 (Attribution)
Work Type Dataset
Acknowledgments
  1. NSF Cooperative Agreement DMR-2039351
Publisher
  1. 2D Crystal Consortium
Publication Date June 29, 2024
Subject
  1. Materials Science
DOI doi:10.26207/x074-bw26
Related URLs
Deposited June 29, 2024

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Work History

Version 1
published

  • Created
  • Updated
  • Updated Keyword, Subject, Publisher, and 4 more Show Changes
    Keyword
    • MOCVD, WSe2, Sapphire
    Subject
    • Materials Science
    Publisher
    • 2D Crystal Consortium
    Related URLs
    • https://doi.org/10.60551/znh3-mj13, https://doi.org/10.60551/a534-xs21, https://data.2dccmip.org/1S3XOdOb4xb9
    Subtitle
    • Materials Science
    Description
    • This data package includes information on growth conditions and characterization results for TMD films used in the fabrication of 3D integrated 2-tier CMOS integrated circuits by Prof. Saptarshi Das' group at Penn State. The TMD films of WSe2 multi-layer films grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility. The data includes recipe files from the MOCVD equipment and data files from atomic force microscopy (AFM) and room temperature photoluminescence and Raman spectroscopy carried out on the samples. Characterization is typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from wafer edge on opposite side to the flat).
    Publication Date
    • 2024-06-29
  • Updated Acknowledgments Show Changes
    Acknowledgments
    • NSF Cooperative Agreement DMR-2039351
  • Added Creator Joan Redwing
  • Added Creator Chen Chen
  • Added Creator Shalini Kumari
  • Updated License Show Changes
    License
    • https://creativecommons.org/licenses/by/4.0/
  • Added MCV1-230516B-CC.zip
  • Added MCV1-230517A-SK.zip
  • Added README.txt
  • Published

Version 2
published

  • Created
  • Updated Work Title Show Changes
    Work Title
    • MOCVD grown multi-layer WSe2 used for 3D integrated 2-tier CMOS chip
    • Monolithic three-dimensional integration of complementary two-dimensional field effect transistors
  • Published
  • Updated