
Monolithic three-dimensional integration of complementary two-dimensional field effect transistors
This data package includes information on growth conditions and characterization results for TMD films used in the fabrication of 3D integrated 2-tier CMOS integrated circuits by Prof. Saptarshi Das' group at Penn State. The TMD films of WSe2 multi-layer films grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility. The data includes recipe files from the MOCVD equipment and data files from atomic force microscopy (AFM) and room temperature photoluminescence and Raman spectroscopy carried out on the samples. Characterization is typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from wafer edge on opposite side to the flat).
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Work Title | Monolithic three-dimensional integration of complementary two-dimensional field effect transistors |
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Subtitle | Materials Science |
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License | CC BY 4.0 (Attribution) |
Work Type | Dataset |
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Publication Date | June 29, 2024 |
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DOI | doi:10.26207/x074-bw26 |
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Deposited | June 29, 2024 |
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