Monolayer MoS2 grown by MOCVD on sapphire for reactor comparison study

This data package includes detailed information on growth conditions and characterization results for the study of the "Structure-Property-Processing Correlations of MoS2 Grown via Distinct Metalorganic Chemical Vapor Deposition Reactor Geometries" conducted in Professor Dave Estrada's group at Boise State University. Both MoS2 monolayer samples, MCV1-220630A-CC and MCV1-220706A-MC in this study were grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State University. It includes the growth recipes from the MOCVD system and data files from atomic force microscopy (AFM), room temperature photoluminescence (PL), and Raman spectroscopy carried out on the samples. Note that AFM, room temperature PL and Raman Characterization are typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from the wafer edge on the opposite side to the flat).

Additional details are provided in the 2DCC LiST database: https://m4-2dcc.vmhost.psu.edu/list/data/10.26207/a88x-pa08

Citation

Redwing, Joan; Chen, Chen (2023). Monolayer MoS2 grown by MOCVD on sapphire for reactor comparison study [Data set]. Scholarsphere. https://doi.org/10.26207/a88x-pa08

Files

  • MCV1-220630A-CC.zip

    size: 123 MB | mime_type: application/zip | date: 2023-11-14 | sha256: 970ec42

  • MCV1-220706A-MC.zip

    size: 88.9 MB | mime_type: application/zip | date: 2023-11-14 | sha256: 78e30bc

Metadata

Work Title Monolayer MoS2 grown by MOCVD on sapphire for reactor comparison study
Subtitle Materials Science
Access
Open Access
Creators
  1. Joan Redwing
  2. Chen Chen
Keyword
  1. MOCVD
  2. MoS2
  3. Sapphire
License CC BY 4.0 (Attribution)
Work Type Dataset
Acknowledgments
  1. NSF Cooperative Agreement DMR-2039351
Publisher
  1. 2D Crystal Consortium
Publication Date November 14, 2023
Subject
  1. Materials Science
DOI doi:10.26207/a88x-pa08
Related URLs
Deposited November 14, 2023

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Version 1
published

  • Created
  • Updated
  • Updated Acknowledgments Show Changes
    Acknowledgments
    • NSF Cooperative Agreement DMR-2039351
  • Added Creator Chen Chen
  • Added Creator Joan Redwing
  • Added MCV1-220706A-MC.zip
  • Added MCV1-220630A-CC.zip
  • Updated License Show Changes
    License
    • https://creativecommons.org/licenses/by/4.0/
  • Updated Description Show Changes
    Description
    • This data package includes detailed information on growth conditions and characterization results for the study of the "Structure-Property-Processing Correlations of MoS2 Grown via Distinct Metalorganic Chemical Vapor Deposition Reactor Geometries" conducted in Professor Dave Estrada's group at Boise State University.
    • Both MoS2 monolayer samples, MCV1-220630A-CC and MCV1-220706A-MC in this study were grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State University. It includes the growth recipes from the MOCVD system and data files from atomic force microscopy (AFM), field-emission scanning electron microscopy (FESEM), room temperature photoluminescence (PL), and Raman spectroscopy, In-plane X-ray diffraction (XRD) carried out on the samples. Note that AFM, room temperature PL and Raman Characterization are typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from the wafer edge on the opposite side to the flat).
    • Both MoS2 monolayer samples, MCV1-220630A-CC and MCV1-220706A-MC in this study were grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State University. It includes the growth recipes from the MOCVD system and data files from atomic force microscopy (AFM), field-emission scanning electron microscopy (FESEM), room temperature photoluminescence (PL), and Raman spectroscopy, In-plane X-ray diffraction (XRD) carried out on the samples. Note that AFM, room temperature PL and Raman Characterization are typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from the wafer edge on the opposite side to the flat).
    • Additional details are provided in the 2DCC LiST database: https://m4-2dcc.vmhost.psu.edu/list/data/45
  • Updated Creator Joan Redwing
  • Updated Creator Chen Chen
  • Updated Description Show Changes
    Description
    • This data package includes detailed information on growth conditions and characterization results for the study of the "Structure-Property-Processing Correlations of MoS2 Grown via Distinct Metalorganic Chemical Vapor Deposition Reactor Geometries" conducted in Professor Dave Estrada's group at Boise State University.
    • Both MoS2 monolayer samples, MCV1-220630A-CC and MCV1-220706A-MC in this study were grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State University. It includes the growth recipes from the MOCVD system and data files from atomic force microscopy (AFM), field-emission scanning electron microscopy (FESEM), room temperature photoluminescence (PL), and Raman spectroscopy, In-plane X-ray diffraction (XRD) carried out on the samples. Note that AFM, room temperature PL and Raman Characterization are typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from the wafer edge on the opposite side to the flat).
    • Both MoS2 monolayer samples, MCV1-220630A-CC and MCV1-220706A-MC in this study were grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State University. It includes the growth recipes from the MOCVD system and data files from atomic force microscopy (AFM), room temperature photoluminescence (PL), and Raman spectroscopy carried out on the samples. Note that AFM, room temperature PL and Raman Characterization are typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from the wafer edge on the opposite side to the flat).
    • Additional details are provided in the 2DCC LiST database: https://m4-2dcc.vmhost.psu.edu/list/data/45
  • Updated Work Title Show Changes
    Work Title
    • Structure-Property-Processing Correlations of MoS2 Grown via Distinct Metalorganic Chemical Vapor Deposition Reactor Geometries
    • Monolayer MoS2 grown by MOCVD on sapphire for reactor comparison study
  • Published
  • Updated

Version 2
published

  • Created
  • Updated Description, Related URLs Show Changes
    Description
    • This data package includes detailed information on growth conditions and characterization results for the study of the "Structure-Property-Processing Correlations of MoS2 Grown via Distinct Metalorganic Chemical Vapor Deposition Reactor Geometries" conducted in Professor Dave Estrada's group at Boise State University.
    • Both MoS2 monolayer samples, MCV1-220630A-CC and MCV1-220706A-MC in this study were grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State University. It includes the growth recipes from the MOCVD system and data files from atomic force microscopy (AFM), room temperature photoluminescence (PL), and Raman spectroscopy carried out on the samples. Note that AFM, room temperature PL and Raman Characterization are typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from the wafer edge on the opposite side to the flat).
    • Additional details are provided in the 2DCC LiST database: https://m4-2dcc.vmhost.psu.edu/list/data/45
    • Additional details are provided in the 2DCC LiST database: https://m4-2dcc.vmhost.psu.edu/list/data/10.26207/a88x-pa08
    Related URLs
    • https://m4-2dcc.vmhost.psu.edu/list/data/10.26207/a88x-pa08
  • Published
  • Updated

Version 3
published

  • Created
  • Updated Related URLs Show Changes
    Related URLs
    • https://m4-2dcc.vmhost.psu.edu/list/data/10.26207/a88x-pa08
    • http://data.2dccmip.org/10.26207/a88x-pa08
  • Published
  • Updated