Optical properties of PtSe2 thin films determined by in-situ spectroscopic ellipsometry
Using in-situ spectroscopic ellipsometry, the thickness-dependent dielectric function of PtSe2 was determined during molecular beam epitaxy growth. The layer-dependent optical and electronic properties of the transition metal dichalcogenide were obtained through fitting the dielectric function with Kramers-Kronig-consistent oscillators during its entire growth and post-annealing process. As the thickness of the PtSe2 film increased, two oscillators depicting its electronic transitions increased in amplitude and shifted red. The same red-shifting behavior was found for the center of all oscillators used to represent the band-to-band transitions of PtSe2 reaching a saturation value as the film approached ~20 nm. The Drude contribution, however, stayed constant for thicknesses larger than 5 nm, evidencing metallic properties of PtSe2 thin films in this thickness range. Films thinner than 5 nm showed in contrast a decreasing Drude contribution. By using an effective medium approximation-model to represent the film, the sample composition was furthermore determined as a function of growth and annealing time.
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| Work Title | Optical properties of PtSe2 thin films determined by in-situ spectroscopic ellipsometry |
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| Subtitle | Materials Science |
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| License | CC BY 4.0 (Attribution) |
| Work Type | Dataset |
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| Publication Date | April 10, 2025 |
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| DOI | doi:10.26207/vz46-k226 |
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| Deposited | April 10, 2025 |
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