Substrate preparation methods for improved synthesis of Bi2Se3 films grown on sapphire by molecular beam epitaxy

Bi2Se3 thin films have grown in popularity as three-dimensional topological insulators with a host of potential applications. While the films themselves have been widely researched, improvements derived from better substrate preparation have lagged. In this study, investigations into the preparation of c-plane sapphire (c-sapphire) substrates and the influence on film quality were done. Analysis on the effects of substrate pretreat by ultra-high vacuum annealing of the substrates, the use of Nano-strip® as an etchant, and high temperature in air anneal of c-sapphire to form a terraced morphology on Bi2Se3 thin film growth were done for this study.

Citation

Trice, Ryan; Law, Stephanie; Richardella, Anthony; Hilse, Maria; Yu, Mingyu (2025). Substrate preparation methods for improved synthesis of Bi2Se3 films grown on sapphire by molecular beam epitaxy [Data set]. Scholarsphere. https://doi.org/10.26207/67wx-fx48

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Work Title Substrate preparation methods for improved synthesis of Bi2Se3 films grown on sapphire by molecular beam epitaxy
Access
Open Access
Creators
  1. Ryan Trice
  2. Stephanie Law
  3. Anthony Raymond Richardella
  4. Maria Hilse
  5. Mingyu Yu
License CC BY 4.0 (Attribution)
Work Type Dataset
Publisher
  1. 2D Crystal Consortium
Publication Date 2025
Subject
  1. Materials Science
DOI doi:10.26207/67wx-fx48
Related URLs
  1. https://pennstateoffice365.sharepoint.com/:f:/s/2DCC-Data/EnY1i7mHpQBEr68IWa8-zgIBfwicMbxy_hT2H9oSuQ7duw
Deposited April 11, 2025

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Version 1
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  • Created

    April 11, 2025 16:38 by rvt5353

  • Updated

    April 11, 2025 16:38 by [unknown user]

  • Updated Description, Publication Date Show Changes

    April 11, 2025 16:40 by rvt5353

    Description
    • a) Electronic mail: sal6149@psu.edu
    • Bi2Se3 thin films have grown in popularity as three-dimensional topological insulators with a host of potential applications. While the films themselves have been widely researched, improvements derived from better substrate preparation have lagged. In this study, investigations into the preparation of c-plane sapphire (c-sapphire) substrates and the influence on film quality were done. Analysis on the effects of substrate pretreat by ultra-high vacuum annealing of the substrates, the use of Nano-strip® as an etchant, and high temperature in air anneal of c-sapphire to form a terraced morphology on Bi2Se3 thin film growth were done for this study.
    Publication Date
    • 2025
  • Added Creator Ryan Trice

    April 11, 2025 16:41 by rvt5353

  • Added Creator Stephanie Law

    April 11, 2025 16:41 by rvt5353

  • Added Creator Anthony Raymond Richardella

    April 11, 2025 16:41 by rvt5353

  • Added Creator Maria Hilse

    April 11, 2025 16:41 by rvt5353

  • Added Creator Mingyu Yu

    April 11, 2025 16:41 by rvt5353

  • Updated Subject, Publisher, Description, and 1 more Show Changes

    April 11, 2025 16:57 by rvt5353

    Subject
    • Materials Science
    Publisher
    • 2D Crystal Consortium
    Description
    • a) Electronic mail: sal6149@psu.edu
    • Bi2Se3 thin films have grown in popularity as three-dimensional topological insulators with a host of potential applications. While the films themselves have been widely researched, improvements derived from better substrate preparation have lagged. In this study, investigations into the preparation of c-plane sapphire (c-sapphire) substrates and the influence on film quality were done. Analysis on the effects of substrate pretreat by ultra-high vacuum annealing of the substrates, the use of Nano-strip® as an etchant, and high temperature in air anneal of c-sapphire to form a terraced morphology on Bi2Se3 thin film growth were done for this study.
    Related URLs
    • https://pennstateoffice365.sharepoint.com/:f:/s/2DCC-Data/EnY1i7mHpQBEr68IWa8-zgIBfwicMbxy_hT2H9oSuQ7duw
  • Added MBE2-230524A-RT (1).zip

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  • Updated License Show Changes

    April 11, 2025 17:09 by rvt5353

    License
    • https://creativecommons.org/licenses/by/4.0/
  • Published

    April 11, 2025 17:09 by rvt5353

  • Updated

    April 11, 2025 22:04 by [unknown user]