Strongly temperature dependent ferroelectric switching in AlN, Al<sub>1-x</sub>Sc<sub>x</sub>N, and Al<sub>1-x</sub>B<sub>x</sub>N thin films

This manuscript reports the temperature dependence of ferroelectric switching in Al0.84Sc0.16N, Al0.93B0.07N, and AlN thin films. Polarization reversal is demonstrated in all compositions and is strongly temperature dependent. Between room temperature and 300 °C, the coercive field drops by almost 50% in all samples, while there was very small temperature dependence of the remanent polarization value. Over this same temperature range, the relative permittivity increased between 5% and 10%. Polarization reversal was confirmed by piezoelectric coefficient analysis and chemical etching. Applying intrinsic/homogeneous switching models produces nonphysical fits, while models based on thermal activation suggest that switching is regulated by a distribution of pinning sites or nucleation barriers with an average activation energy near 28 meV.

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Work Title Strongly temperature dependent ferroelectric switching in AlN, Al<sub>1-x</sub>Sc<sub>x</sub>N, and Al<sub>1-x</sub>B<sub>x</sub>N thin films
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Open Access
Creators
  1. Wanlin Zhu
  2. John Hayden
  3. Fan He
  4. Jung In Yang
  5. Pannawit Tipsawat
  6. Mohammad D. Hossain
  7. Jon Paul Maria
  8. Susan Trolier-McKinstry
License In Copyright (Rights Reserved)
Work Type Article
Publisher
  1. Applied Physics Letters
Publication Date August 9, 2021
Publisher Identifier (DOI)
  1. https://doi.org/10.1063/5.0057869
Deposited December 08, 2021

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  • Created
  • Added Strongly_Temperature_Dependent_Ferroelectric_Switching_in_AlN__Al1-xScxN__and_Al1-xBxN_Thin_Films.pdf
  • Added Creator Wanlin Zhu
  • Added Creator John Hayden
  • Added Creator Fan He
  • Added Creator Jung In Yang
  • Added Creator Pannawit Tipsawat
  • Added Creator Mohammad D. Hossain
  • Added Creator Jon Paul Maria
  • Added Creator Susan Trolier-McKinstry
  • Published
  • Updated
  • Updated