MoSe2-WSe2 in-plane nanodot heterostructures for CL-STEM studies

This data package includes information on sample preparation, growth conditions and characterization results for MoSe2-WSe2 in-plane heterostructure samples reported in the main body of the manuscript entitled “Localized light emission from two-dimensional MoSe2 nanodots embedded in WSe2 matrix," by S. Bachu, et al. The MoSe2-WSe2 samples were grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (system MOCVD1). The data includes recipe files from the MOCVD equipment and data files from atomic force microscopy (AFM). Characterization was typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from wafer edge on opposite side to the flat) unless otherwise specified.

Citation

Huet, Benjamin (2024). MoSe2-WSe2 in-plane nanodot heterostructures for CL-STEM studies [Data set]. Scholarsphere. https://doi.org/10.26207/f259-gq75

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Work Title MoSe2-WSe2 in-plane nanodot heterostructures for CL-STEM studies
Subtitle Materials Science
Access
Open Access
Creators
  1. Benjamin Huet
Keyword
  1. Materials Science
  2. MOCVD
License CC BY 4.0 (Attribution)
Work Type Dataset
Acknowledgments
  1. NSF Cooperative Agreement DMR-2039351
Publisher
  1. 2D Crystal Consortium
Publication Date December 18, 2024
Subject
  1. Materials Science
DOI doi:10.26207/f259-gq75
Related URLs
Deposited December 18, 2024

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Version 1
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  • Created
  • Updated
  • Updated Keyword, Subject, Publisher, and 4 more Show Changes
    Keyword
    • Materials Science, MOCVD
    Subject
    • Materials Science
    Publisher
    • 2D Crystal Consortium
    Related URLs
    • https://doi.org/10.60551/znh3-mj13, https://doi.org/10.60551/fdhr-6s19, https://doi.org/10.60551/0w4q-5h15, https://doi.org/10.60551/a534-xs21, https://data.2dccmip.org/mfccmO0IwTzT
    Subtitle
    • Materials Science
    Description
    • his data package includes information on sample preparation, growth conditions and characterization results for MoSe2-WSe2 in-plane heterostructure samples reported in the main body of the manuscript entitled “Localized light emission from two-dimensional MoSe2 nanodots embedded in WSe2 matrix," by S. Bachu, et al. The MoSe2-WSe2 samples were grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (system MOCVD1). The data includes recipe files from the MOCVD equipment and data files from atomic force microscopy (AFM). Characterization was typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from wafer edge on opposite side to the flat) unless otherwise specified.
    Publication Date
    • 2024-12-18
  • Added Creator Benjamin Huet
  • Added MCV1-201006A-BH.zip
  • Added MCV1-201002B-BH.zip
  • Added MCV1-201002A-BH.zip
  • Added MCV1-201005A-BH.zip
  • Added READM.txt
  • Deleted READM.txt
  • Added README.txt
  • Updated Acknowledgments Show Changes
    Acknowledgments
    • NSF Cooperative Agreement DMR-2039351
  • Updated Creator Benjamin Huet
  • Updated License, Description Show Changes
    License
    • https://creativecommons.org/licenses/by/4.0/
    Description
    • his data package includes information on sample preparation, growth conditions and characterization results for MoSe2-WSe2 in-plane heterostructure samples reported in the main body of the manuscript entitled “Localized light emission from two-dimensional MoSe2 nanodots embedded in WSe2 matrix," by S. Bachu, et al. The MoSe2-WSe2 samples were grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (system MOCVD1). The data includes recipe files from the MOCVD equipment and data files from atomic force microscopy (AFM). Characterization was typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from wafer edge on opposite side to the flat) unless otherwise specified.
    • This data package includes information on sample preparation, growth conditions and characterization results for MoSe2-WSe2 in-plane heterostructure samples reported in the main body of the manuscript entitled “Localized light emission from two-dimensional MoSe2 nanodots embedded in WSe2 matrix," by S. Bachu, et al. The MoSe2-WSe2 samples were grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (system MOCVD1). The data includes recipe files from the MOCVD equipment and data files from atomic force microscopy (AFM). Characterization was typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from wafer edge on opposite side to the flat) unless otherwise specified.
  • Published
  • Updated