Topological optimization of electrically tunable silicon-organic metasurfaces
We present a non-intuitive but still practically implementable silicon meta-atom with strong electrical tunability. We used topological optimization on a 20×20-variable silicon-on-insulator grid and achieved tunability by using JRD1, a stable electrooptic polymer. The electric potential is applied on two ITO electrodes, and a peak shift of 0.6 nm V-1 is achieved in the optical communication E and S bands. The proposed device can be regarded as a demultiplexer or channel selector on a coarse wavelength-division-multiplexing system, with an extinction ratio between adjacent channels of ∼14 dB.
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| Work Title | Topological optimization of electrically tunable silicon-organic metasurfaces |
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| License | In Copyright (Rights Reserved) |
| Work Type | Conference Proceeding |
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| Publication Date | March 8, 2024 |
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| Deposited | February 10, 2025 |
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