High-performance p-type WSe2 Field Effect Transistor

This data package includes information on sample preparation, growth conditions and characterization results for WSe2 samples reported in the main body of the manuscript entitled “High-performance p-type WSe2 Field Effect Transistor" by Subir Ghosh, Muhtasim Ul Karim Sadaf, Andrew R Graves, Yikai Zheng, Andrew Pannone, Samriddha Ray, Chung-Yu Cheng, Jeremy Guevara, Joan M Redwing, & Saptarshi Das. The samples were grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (system MOCVD1 and system MOCVD2). The data includes recipe files from the MOCVD equipment and data files from atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), room temperature photoluminescence and Raman spectroscopy carried out on the samples.

Citation

Graves, Andrew; Chen, Chen; Cheng, Chung-Yu; Guevara, Jeremy (2025). High-performance p-type WSe2 Field Effect Transistor [Data set]. Scholarsphere. https://doi.org/10.26207/v6de-vh17

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Metadata

Work Title High-performance p-type WSe2 Field Effect Transistor
Subtitle Materials Science
Access
Open Access
Creators
  1. Andrew Graves
  2. Chen Chen
  3. Chung-Yu Cheng
  4. Jeremy Guevara
Keyword
  1. Materials Science
  2. MOCVD
  3. Doping
  4. p-type
License CC BY 4.0 (Attribution)
Work Type Dataset
Acknowledgments
  1. NSF Cooperative Agreement DMR-2039351
Publisher
  1. 2D Crystal Consortium
Publication Date May 6, 2025
Subject
  1. Materials Science
DOI doi:10.26207/v6de-vh17
Related URLs
Deposited May 06, 2025

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Work History

Version 1
published

  • Created
  • Updated
  • Updated Keyword, Subject, Publisher, and 4 more Show Changes
    Keyword
    • Materials Science, MOCVD, Doping, p-type
    Subject
    • Materials Science
    Publisher
    • 2D Crystal Consortium
    Related URLs
    • https://data.2dccmip.org/1e3okid5jF1Y, https://doi.org/10.60551/znh3-mj13, https://doi.org/10.60551/a0g5-8n60, https://doi.org/10.60551/fdhr-6s19, https://doi.org/10.60551/0w4q-5h15, https://doi.org/10.60551/a534-xs21, https://doi.org/10.60551/y264-bb90
    Subtitle
    • Materials Science
    Description
    • This data package includes information on sample preparation, growth conditions and characterization results for WSe2 samples reported in the main body of the manuscript entitled “High-performance p-type WSe2 Field Effect Transistor" by Subir Ghosh, Muhtasim Ul Karim Sadaf, Andrew R Graves, Yikai Zheng, Andrew Pannone, Samriddha Ray, Chung-Yu Cheng, Jeremy Guevara, Joan M Redwing, & Saptarshi Das. The samples were grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (system MOCVD1 and system MOCVD2). The data includes recipe files from the MOCVD equipment and data files from atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), room temperature photoluminescence and Raman spectroscopy carried out on the samples.
    Publication Date
    • 2025-05-06
  • Updated Acknowledgments Show Changes
    Acknowledgments
    • NSF Cooperative Agreement DMR-2039351
  • Added Creator Andrew Graves
  • Added Creator Chen Chen
  • Added MCV2-240509A-AG.zip
  • Added Readme.txt
  • Added MCV1-231219A-CC.zip
  • Deleted MCV1-231219A-CC.zip
  • Added Creator Chung-Yu Cheng
  • Added Creator Jeremy Guevara
  • Added MCV1-231219A-CC.zip
  • Updated License Show Changes
    License
    • https://creativecommons.org/licenses/by/4.0/
  • Published
  • Updated