High-performance p-type WSe2 Field Effect Transistor
This data package includes information on sample preparation, growth conditions and characterization results for WSe2 samples reported in the main body of the manuscript entitled “High-performance p-type WSe2 Field Effect Transistor" by Subir Ghosh, Muhtasim Ul Karim Sadaf, Andrew R Graves, Yikai Zheng, Andrew Pannone, Samriddha Ray, Chung-Yu Cheng, Jeremy Guevara, Joan M Redwing, & Saptarshi Das. The samples were grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (system MOCVD1 and system MOCVD2). The data includes recipe files from the MOCVD equipment and data files from atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), room temperature photoluminescence and Raman spectroscopy carried out on the samples.
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Work Title | High-performance p-type WSe2 Field Effect Transistor |
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Subtitle | Materials Science |
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License | CC BY 4.0 (Attribution) |
Work Type | Dataset |
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Publication Date | May 6, 2025 |
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DOI | doi:10.26207/v6de-vh17 |
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Deposited | May 06, 2025 |
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