
MOCVD-grown 2D MoS2 Films Used for Multifunctional FETs Exploiting Incipient Ferroelectricity
The MoS2 sample, MCV1-241117A-CC, was grown by metalorganic chemical vapor deposition (MOCVD) on 2" A-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (MOCVD1). The data includes recipe file from the MOCVD equipment and data files from atomic force microscopy (AFM), room temperature photoluminescence and Raman spectroscopy, In-plane XRD carried out on the sample. Characterization was typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from wafer edge on opposite side to the flat) unless otherwise specified.
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Work Title | MOCVD-grown 2D MoS2 Films Used for Multifunctional FETs Exploiting Incipient Ferroelectricity |
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Subtitle | Materials Science |
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License | CC BY 4.0 (Attribution) |
Work Type | Dataset |
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Publication Date | November 12, 2024 |
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DOI | doi:10.26207/mc6e-xz31 |
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Deposited | November 12, 2024 |
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