MOCVD-grown 2D MoS2 Films Used for Multifunctional FETs Exploiting Incipient Ferroelectricity

The MoS2 sample, MCV1-241117A-CC, was grown by metalorganic chemical vapor deposition (MOCVD) on 2" A-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (MOCVD1). The data includes recipe file from the MOCVD equipment and data files from atomic force microscopy (AFM), room temperature photoluminescence and Raman spectroscopy, In-plane XRD carried out on the sample. Characterization was typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from wafer edge on opposite side to the flat) unless otherwise specified.

Citation

Chen, Chen; Kumari, Shalini (2024). MOCVD-grown 2D MoS2 Films Used for Multifunctional FETs Exploiting Incipient Ferroelectricity [Data set]. Scholarsphere. https://doi.org/10.26207/mc6e-xz31

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Work Title MOCVD-grown 2D MoS2 Films Used for Multifunctional FETs Exploiting Incipient Ferroelectricity
Subtitle Materials Science
Access
Open Access
Creators
  1. Chen Chen
  2. Shalini Kumari
Keyword
  1. Material Sciences
  2. Thin Films
  3. TMD
  4. MOCVD
  5. 2D-FETs
  6. MoS2
License CC BY 4.0 (Attribution)
Work Type Dataset
Acknowledgments
  1. NSF Cooperative Agreement DMR-2039351
Publisher
  1. 2D Crystal Consortium
Publication Date November 12, 2024
Subject
  1. Materials Science
DOI doi:10.26207/mc6e-xz31
Related URLs
Deposited November 12, 2024

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Version 1
published

  • Created
  • Updated
  • Updated Description, Publication Date Show Changes
    Description
    • The MoS2 sample, MCV1-241117A-CC, was grown by metalorganic chemical vapor deposition (MOCVD) on 2" A-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (MOCVD1). The data includes recipe file from the MOCVD equipment and data files from atomic force microscopy (AFM), room temperature photoluminescence and Raman spectroscopy, In-plane XRD carried out on the sample. Characterization was typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from wafer edge on opposite side to the flat) unless otherwise specified.
    Publication Date
    • 2024-11-12
  • Updated Acknowledgments Show Changes
    Acknowledgments
    • NSF Cooperative Agreement DMR-2039351
  • Added Creator Chen Chen
  • Added MCV1-221117A-CC.zip
  • Updated
  • Updated Keyword, Subject, Subtitle, and 2 more Show Changes
    Keyword
    • Material Sciences, Thin Films, TMD, MOCVD, 2D-FETs, MoS2
    Subject
    • Materials Science
    Subtitle
    • Materials Science
    Publisher
    • 2D Crystal Consortium
    Related URLs
    • https://doi.org/10.60551/znh3-mj13, https://doi.org/10.60551/a534-xs21, https://data.2dccmip.org/q2uzPg7hqZOz
  • Updated Related URLs Show Changes
    Related URLs
    • https://doi.org/10.60551/znh3-mj13, https://doi.org/10.60551/a534-xs21, https://data.2dccmip.org/q2uzPg7hqZOz
    • https://doi.org/10.60551/znh3-mj13, https://doi.org/10.60551/a534-xs21, https://data.2dccmip.org/q2uzPg7hqZOz, https://doi.org/10.60551/ves9-yg76
  • Updated Related URLs Show Changes
    Related URLs
    • https://doi.org/10.60551/znh3-mj13, https://doi.org/10.60551/a534-xs21, https://data.2dccmip.org/q2uzPg7hqZOz, https://doi.org/10.60551/ves9-yg76
    • https://doi.org/10.60551/znh3-mj13, https://doi.org/10.60551/a534-xs21, https://data.2dccmip.org/q2uzPg7hqZOz, https://doi.org/10.60551/ves9-yg76, https://doi.org/10.60551/fdhr-6s19
  • Added README.txt
  • Updated
  • Added Creator Shalini Kumari
  • Updated License Show Changes
    License
    • https://creativecommons.org/licenses/by/4.0/
  • Published
  • Updated

Version 2
published

  • Created
  • Updated Work Title Show Changes
    Work Title
    • Multifunctional 2D FETs exploiting incipient ferroelectricity infreestanding SrTiO3 nanomembranes at sub-ambient temperatures
    • MOCVD-grown 2D MoS2 films used for Multifunctional FETs exploiting incipient ferroelectricity
  • Updated Work Title Show Changes
    Work Title
    • MOCVD-grown 2D MoS2 films used for Multifunctional FETs exploiting incipient ferroelectricity
    • MOCVD-grown 2D MoS2 Films Used For Multifunctional FETs Exploiting Incipient Ferroelectricity
  • Updated Work Title Show Changes
    Work Title
    • MOCVD-grown 2D MoS2 Films Used For Multifunctional FETs Exploiting Incipient Ferroelectricity
    • MOCVD-grown 2D MoS2 Films Used for Multifunctional FETs Exploiting Incipient Ferroelectricity
  • Published
  • Updated