Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films

Ferroelectric switching was studied in 20 nm thick Al0.68Sc0.32N and Al0.64Sc0.36N films (with 4 nm surface oxides) on platinized silicon wafers by multiple electrical characterization methods. Positive up negative down (PUND) measurements were conducted using 100 \mu s monopolar triangular waveform excitation. At room temperature, Al0.68Sc0.32N exhibited an apparent remanent polarization, P r}} = {140}\,\,\mu C /cm2 and a coercive field, E c}} = {6.5 MV/cm, while film leakage prevented quantitative measurement of the Al0.64Sc0.36N ferroelectric properties. Remanent polarizations of 75~\mu C /cm2 for Al0.68Sc0.32N and 25\mu C /cm2for Al0.64Sc0.36N were measured at 120 K. Partial ferroelectric switching was confirmed at room temperature for both materials via the measured transverse piezoelectric coefficients (e31, f) of -1.3 C/m2 (down-switching) and -0.3 C/m2 (up-switching) for Al0.68Sc0.32N, and -0.9 C/m2 (down-switching) and -0.7 C/m2 (up-switching) for Al0.64Sc0.36N.



Work Title Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films
Open Access
  1. Dixiong Wang
  2. Jeffrey Zheng
  3. Pariasadat Musavigharavi
  4. Wanlin Zhu
  5. Alexandre C. Foucher
  6. Susan E. Trolier-Mckinstry
  7. Eric A. Stach
  8. Roy H. Olsson
License In Copyright (Rights Reserved)
Work Type Article
  1. IEEE Electron Device Letters
Publication Date December 1, 2020
Publisher Identifier (DOI)
  1. https://doi.org/10.1109/LED.2020.3034576
Deposited December 08, 2021




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Work History

Version 1

  • Created
  • Added Ferroelectric_Switching_in_Sub-20_nm_Aluminum_Scandium_Nitride_Thin_Films-IEEE.ElecDevLet-2020.pdf
  • Added Creator Dixiong Wang
  • Added Creator Jeffrey Zheng
  • Added Creator Pariasadat Musavigharavi
  • Added Creator Wanlin Zhu
  • Added Creator Alexandre C. Foucher
  • Added Creator Susan E. Trolier-Mckinstry
  • Added Creator Eric A. Stach
  • Added Creator Roy H. Olsson
  • Published
  • Updated
  • Updated