Electron beam evaporated Au islands as a nanoscale etch mask on few-layer MoS2 and fabrication of top-edge hybrid contacts for field-effect transistors

Accepted version prior to typesetting for the following paper:

Electron beam evaporated Au islands as a nanoscale etch mask on few-layer MoS2 and fabrication of top-edge hybrid contacts for field-effect transistors, 2021 Nanotechnology 32 025203, https://doi.org/10.1088/1361-6528/abbb4a

Accepted version prior to typesetting for the following paper:

Electron beam evaporated Au islands as a nanoscale etch mask on few-layer MoS2 and fabrication of top-edge hybrid contacts for field-effect transistors, 2021 Nanotechnology 32 025203, https://doi.org/10.1088/1361-6528/abbb4a

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Work Title Electron beam evaporated Au islands as a nanoscale etch mask on few-layer MoS2 and fabrication of top-edge hybrid contacts for field-effect transistors
Access
Open Access
Creators
  1. Timothy N. Walter
  2. Nailah Oliver
  3. Suzanne Mohney
Keyword
  1. MoS2, molybdenum disulfide, 2D semiconductor, transition metal dichalcogenide, ohmic contact, field effect transistor, Au islands
License In Copyright (Rights Reserved)
Work Type Article
Acknowledgments
  1. The authors acknowledge funding from the National Science Foundation through Grant No. 1433378. Any opinions, find- ings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation. The authors declare no conflicts of interest.
Publisher
  1. IOPScience
Publication Date 2020
Subject
  1. Electronics, electronic materials, semiconductors, devices
Language
  1. English
Publisher Identifier (DOI)
  1. 10.1088/1361-6528/abbb4a
Deposited December 21, 2021

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Version 1
published

  • Created

    December 21, 2021 13:23 by sem2

  • Updated Acknowledgments Show Changes

    December 21, 2021 13:24 by sem2

    Acknowledgments
    • The authors acknowledge funding from the National Science Foundation through Grant No. 1433378. Any opinions, find- ings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation. The authors declare no conflicts of interest.
  • Added Creator Timothy N. Walter

    December 21, 2021 13:24 by sem2

  • Added Creator Nailah Oliver

    December 21, 2021 13:24 by sem2

  • Added Creator Suzanne Mohney

    December 21, 2021 13:24 by sem2

  • Added Electron beam evaporated Au islands as a nanoscale etch mask on few-layer MoS2 and fabrication of top-edge hybrid contacts for field-effect transistors_Nanotechnology.pdf

    December 21, 2021 13:25 by sem2

  • Updated Subject, Language, License Show Changes

    December 21, 2021 13:26 by sem2

    Subject
    • Electronics, electronic materials, semiconductors, devices
    Language
    • English
    License
    • https://rightsstatements.org/page/InC/1.0/
  • Published

    December 21, 2021 13:26 by sem2

  • Updated

    March 22, 2022 16:18 by [unknown user]