Investigation of SnSe thin film stability against oxidation in air

Investigation the stability against oxidation and degradation in air of SnSe thin films grown by molecular beam epitaxy is subject of this study. After the fabrication process, the crystal, chemical, and electronic transport properties of SnSe thin films were evaluated immediately and repeatedly so after two years being stored in air at atmospheric pressure. X-ray diffraction, Raman spectroscopy, X-ray reflectivity, X-ray photoelectric spectroscopy, and electrical impedance spectroscopy data elucidated very limited surface oxidation of the SnSe thin film. SnSe surface oxidation was found to be a self-limited process producing a top oxide layer of 1-5 nm. The electrical transport properties were still dominated by conduction through the bulk SnSe thin film even after a period of two years.

Citation

Liu, Derrick Shao-Heng; Hilse, Maria; Garten, Lauren ; Chin, Jonathan (2024). Investigation of SnSe thin film stability against oxidation in air [Data set]. Scholarsphere. https://doi.org/10.26207/epv5-2y55

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Work Title Investigation of SnSe thin film stability against oxidation in air
Access
Open Access
Creators
  1. Derrick Shao-Heng Liu
  2. Maria Hilse
  3. Lauren Garten
  4. Jonathan Chin
Keyword
  1. Thin Films
  2. MBE
  3. Oxidation
  4. Synthesis
License CC BY 4.0 (Attribution)
Work Type Dataset
Acknowledgments
  1. NSF Cooperative Agreement DMR-2039351
Publisher
  1. 2D Crystal Consortium
Publication Date September 20, 2024
Subject
  1. Materials Science
DOI doi:10.26207/epv5-2y55
Related URLs
Deposited September 20, 2024

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Version 1
published

  • Created
  • Updated
  • Updated Keyword, Publisher, Related URLs, and 3 more Show Changes
    Keyword
    • Thin Films
    Publisher
    • 2D Crystal Consortium
    Related URLs
    • https://data.2dccmip.org/xBzRVQNFDZ92, https://doi.org/10.60551/gqq8-yj90, https://doi.org/10.1557/s43579-024-00630-8
    Subtitle
    • Materials Science
    Description
    • Investigation the stability against oxidation and degradation in air of SnSe thin films grown by molecular beam epitaxy is subject of this study. After the fabrication process, the crystal, chemical, and electronic transport properties of SnSe thin films were evaluated immediately and repeatedly so after two years being stored in air at atmospheric pressure. X-ray diffraction, Raman spectroscopy, X-ray reflectivity, X-ray photoelectric spectroscopy, and electrical impedance spectroscopy data elucidated very limited surface oxidation of the SnSe thin film. SnSe surface oxidation was found to be a self-limited process producing a top oxide layer of 1-5 nm. The electrical transport properties were still dominated by conduction through the bulk SnSe thin film even after a period of two years.
    Publication Date
    • 2024-09-20
  • Updated Keyword, Subject, Subtitle Show Changes
    Keyword
    • Thin Films
    • Thin Films, MBE, Oxidation, Synthesis
    Subject
    • Materials Science
    Subtitle
    • Materials Science
  • Updated Acknowledgments Show Changes
    Acknowledgments
    • NSF Cooperative Agreement DMR-2039351
  • Added Creator Derrick Shao-Heng Liu
  • Added Creator Maria Hilse
  • Added Creator Lauren Garten
  • Added Creator Jonathan Chin
  • Added MBE2-230720B-JC.zip
  • Added MBE2-201016A-LG.zip
  • Added MBE2-201015C-LG.zip
  • Added MBE2-201015B-LG.zip
  • Added LG-R0038-single-crystal-bulk-SnSe.zip
  • Added README.txt
  • Updated License Show Changes
    License
    • https://creativecommons.org/licenses/by/4.0/
  • Published
  • Updated