Investigation of SnSe thin film stability against oxidation in air
Investigation the stability against oxidation and degradation in air of SnSe thin films grown by molecular beam epitaxy is subject of this study. After the fabrication process, the crystal, chemical, and electronic transport properties of SnSe thin films were evaluated immediately and repeatedly so after two years being stored in air at atmospheric pressure. X-ray diffraction, Raman spectroscopy, X-ray reflectivity, X-ray photoelectric spectroscopy, and electrical impedance spectroscopy data elucidated very limited surface oxidation of the SnSe thin film. SnSe surface oxidation was found to be a self-limited process producing a top oxide layer of 1-5 nm. The electrical transport properties were still dominated by conduction through the bulk SnSe thin film even after a period of two years.
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Work Title | Investigation of SnSe thin film stability against oxidation in air |
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License | CC BY 4.0 (Attribution) |
Work Type | Dataset |
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Publication Date | September 20, 2024 |
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DOI | doi:10.26207/epv5-2y55 |
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Deposited | September 20, 2024 |
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