Monolithic and heterogenous three-dimensional (3D) integration of two-dimensional (2D) materials using dense vias
This data package includes information on sample preparation, growth conditions and characterization results for the MoS2 sample reported in the main body of the manuscript entitled “Monolithic and heterogenous three-dimensional (3D) integration of two-dimensional (2D) materials using dense vias” by Subir Ghosh, et al. The MoS2 sample was grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (MOCVD1). The data includes recipe file from the MOCVD equipment and data files from atomic force microscopy (AFM), room temperature photoluminescence and Raman spectroscopy carried out on the sample. Characterization was typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from wafer edge on opposite side to the flat) unless otherwise specified.
The MoS2 monolayer grown as part of this study is included in the data package: MCV1-221104B-CC.
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| Work Title | Monolithic and heterogenous three-dimensional (3D) integration of two-dimensional (2D) materials using dense vias |
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| Subtitle | Materials Science |
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| License | CC BY 4.0 (Attribution) |
| Work Type | Dataset |
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| Publication Date | September 10, 2024 |
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| DOI | doi:10.26207/f095-ha45 |
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| Deposited | September 10, 2024 |
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