High field dielectric response in κ-Ga2O3 films
κ-Ga2O3 has been predicted to be a potential ferroelectric material. In this work, undoped Ga2O3 films were grown by either plasma-enhanced atomic layer deposition (PEALD) or metal organic chemical vapor deposition (MOCVD) on platinized sapphire substrates. 50 nm thick PEALD films with a mixture of κ-Ga2O3 and β-Ga2O3 had a relative permittivity of ∼27, a loss tangent below 2%, and high electrical resistivity up to ∼1.5 MV/cm. 700 nm thick MOCVD films with predominantly the κ-Ga2O3 phase had relative permittivities of ∼18 and a loss tangent of 1% at 10 kHz. Neither film showed compelling evidence for ferroelectricity measured at fields up to 1.5 MV/cm, even after hundreds of cycles. Piezoresponse force microscopy measurements on bare κ-Ga2O3 showed a finite piezoelectric response that could not be reoriented for electric fields up to 1.33 MV/cm.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [High field dielectric response in κ-Ga2O3 films. Journal of Applied Physics 134, 20 (2023)] and may be found at https://doi.org/10.1063/5.0169420.
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Work Title | High field dielectric response in κ-Ga2O3 films |
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License | In Copyright (Rights Reserved) |
Work Type | Article |
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Publication Date | November 22, 2023 |
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Deposited | May 08, 2024 |
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