Mn2In2Se5 Thin Films Grown by Molecular Beam Epitaxy

Here, we report the molecular beam epitaxy (MBE) growth of Mn2In2Se5, a spin glass material with high level of magnetic frustration, through the heterointegration of MnSe on In2Se3. Directly depositing α-MnSe on the vdW In2Se3 layers results in Mn intercalation, transforming the In2Se3 layer into Mn2In2Se5. Large growth windows, including substrate temperatures from 250-450 °C and Se:sMn flux ratio of 1.1-3.1, have been identified for the intercalation process. With an optimized MnSe deposition time, smooth, single-crystalline, and (0001)-oriented Mn2In2Se5 layers with a root-mean-square (RMS) roughness of 1.5 nm can be synthesized.

Citation

Zhang, Qihua; Hilse, Maria; Law, Stephanie (2025). Mn2In2Se5 Thin Films Grown by Molecular Beam Epitaxy [Data set]. Scholarsphere. https://doi.org/10.26207/y1ts-cp82

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Work Title Mn2In2Se5 Thin Films Grown by Molecular Beam Epitaxy
Subtitle Materials Science
Access
Open Access
Creators
  1. Qihua Zhang
  2. Maria Hilse
  3. Stephanie Law
Keyword
  1. Materials Science
  2. MBE
  3. Molecular Beam Epitaxie
  4. Mn2In2Se5
License CC BY 4.0 (Attribution)
Work Type Dataset
Acknowledgments
  1. NSF Cooperative Agreement DMR-2039351
Publisher
  1. 2D Crystal Consortium
Publication Date March 24, 2025
Subject
  1. Materials Science
DOI doi:10.26207/y1ts-cp82
Related URLs
Deposited March 24, 2025

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Version 1
published

  • Created
  • Updated
  • Updated Keyword, Subject, Publisher, and 4 more Show Changes
    Keyword
    • Materials Science, MBE, Molecular Beam Epitaxie, Mn2In2Se5
    Subject
    • Materials Science
    Publisher
    • 2D Crystal Consortium
    Related URLs
    • https://doi.org/10.60551/fdhr-6s19, https://doi.org/10.60551/0w4q-5h15, https://doi.org/10.60551/y05r-h460, https://doi.org/10.60551/nbqw-ad98, https://doi.org/10.60551/60mz-h865, https://doi.org/10.60551/ves9-yg76, https://doi.org/10.60551/gqq8-yj90, https://data.2dccmip.org/b4RBt9qXDJ2J
    Subtitle
    • Materials Science
    Description
    • Here, we report the molecular beam epitaxy (MBE) growth of Mn2In2Se5, a spin glass material with high level of magnetic frustration, through the heterointegration of MnSe on In2Se3. Directly depositing α-MnSe on the vdW In2Se3 layers results in Mn intercalation, transforming the In2Se3 layer into Mn2In2Se5. Large growth windows, including substrate temperatures from 250-450 °C and Se:sMn flux ratio of 1.1-3.1, have been identified for the intercalation process. With an optimized MnSe deposition time, smooth, single-crystalline, and (0001)-oriented Mn2In2Se5 layers with a root-mean-square (RMS) roughness of 1.5 nm can be synthesized.
    Publication Date
    • 2025-03-24
  • Updated Acknowledgments Show Changes
    Acknowledgments
    • NSF Cooperative Agreement DMR-2039351
  • Added Creator Qihua Zhang
  • Added Creator Maria Hilse
  • Added Creator Stephanie Law
  • Added Readme 1.txt
  • Added MBE2-240930C-QZ.zip
  • Added MBE2-240603C-QZ.zip
  • Updated License Show Changes
    License
    • https://creativecommons.org/licenses/by/4.0/
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  • Added MBE2-240603A-QZ.zip
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