A stochastic encoder using point defects in two-dimensional materials

This data package includes information on sample preparation, growth conditions and characterization results for the WSe2 sample reported in the main body of the manuscript entitled “A stochastic encoder using point defects in two-dimensional materials” by Harikrishnan Ravichandran, et al. The WSe2 sample was grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (MOCVD1). The data includes recipe file from the MOCVD equipment and data files from atomic force microscopy (AFM), room temperature photoluminescence and Raman spectroscopy carried out on the sample. Characterization was typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from wafer edge on opposite side to the flat) unless otherwise specified.

The WSe2 mostly bilayer sample grown as part of this study is included in the data package: MCV1-220822A-CC.

Citation

Chen, Chen; Kumari, Shalini; Trainor, Nicholas (2024). A stochastic encoder using point defects in two-dimensional materials [Data set]. Scholarsphere. https://doi.org/10.26207/p9fd-qf11

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Metadata

Work Title A stochastic encoder using point defects in two-dimensional materials
Subtitle Materials Science
Access
Open Access
Creators
  1. Chen Chen
  2. Shalini Kumari
  3. Nicholas Trainor
Keyword
  1. MOCVD
  2. Thin Films
  3. WSe2
  4. Epitaxial growth of TMDs
  5. Mostly bilayer film
License CC BY 4.0 (Attribution)
Work Type Dataset
Acknowledgments
  1. NSF Cooperative Agreement DMR-2039351
Publisher
  1. 2D Crystal Consortium
Publication Date September 25, 2024
Subject
  1. Materials Science
DOI doi:10.26207/p9fd-qf11
Related URLs
Deposited September 25, 2024

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Version 1
published

  • Created
  • Updated
  • Updated Keyword, Subject, Publisher, and 4 more Show Changes
    Keyword
    • MOCVD, Thin Films, WSe2, Epitaxial growth of TMDs, Mostly bilayer film
    Subject
    • Materials Science
    Publisher
    • 2D Crystal Consortium
    Related URLs
    • https://data.2dccmip.org/fPeR23ExB7mB
    Subtitle
    • Materials Science
    Description
    • This data package includes information on sample preparation, growth conditions and characterization results for the WSe2 sample reported in the main body of the manuscript entitled “A stochastic encoder using point defects in two-dimensional materials” by Harikrishnan Ravichandran, et al. The WSe2 sample was grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (MOCVD1). The data includes recipe file from the MOCVD equipment and data files from atomic force microscopy (AFM), room temperature photoluminescence and Raman spectroscopy carried out on the sample. Characterization was typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from wafer edge on opposite side to the flat) unless otherwise specified.
    • The WSe2 mostly bilayer sample grown as part of this study is included in the data package: MCV1-220822A-CC.
    Publication Date
    • 2024-09-25
  • Added README 1.txt
  • Added MCV1-220822A-CC.zip
  • Updated Acknowledgments, License Show Changes
    Acknowledgments
    • NSF Cooperative Agreement DMR-2039351
    License
    • https://creativecommons.org/licenses/by/4.0/
  • Added Creator Chen Chen
  • Added Creator Shalini Kumari
  • Added Creator Nicholas Trainor
  • Updated Related URLs Show Changes
    Related URLs
    • https://data.2dccmip.org/fPeR23ExB7mB
    • https://data.2dccmip.org/fPeR23ExB7mB, https://doi.org/10.60551/znh3-mj13, https://doi.org/10.60551/a534-xs21
  • Published
  • Updated