
A stochastic encoder using point defects in two-dimensional materials
This data package includes information on sample preparation, growth conditions and characterization results for the WSe2 sample reported in the main body of the manuscript entitled “A stochastic encoder using point defects in two-dimensional materials” by Harikrishnan Ravichandran, et al. The WSe2 sample was grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (MOCVD1). The data includes recipe file from the MOCVD equipment and data files from atomic force microscopy (AFM), room temperature photoluminescence and Raman spectroscopy carried out on the sample. Characterization was typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from wafer edge on opposite side to the flat) unless otherwise specified.
The WSe2 mostly bilayer sample grown as part of this study is included in the data package: MCV1-220822A-CC.
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Work Title | A stochastic encoder using point defects in two-dimensional materials |
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Subtitle | Materials Science |
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License | CC BY 4.0 (Attribution) |
Work Type | Dataset |
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Publication Date | September 25, 2024 |
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DOI | doi:10.26207/p9fd-qf11 |
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Deposited | September 25, 2024 |
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