Investigation of Sb and Bi doping in SnTe Layers by Molecular Beam Epitaxy
In this work, we report on the effect of incorporating Sb and Bi dopants in SnTe thin films by molecular beam epitaxy. We found that Sb is an unsuitable electron dopant and has a detrimental effect on the SnTe surface morphology. However, by incorporating Bi into SnTe films, a 2.5-time reduction in free hole concentrations have been observed, where the surface remain to be smooth. A high Bi fluxes, on the other hand, have led to the formations of twin defects in the SnTe:Bi layers. Although the films remain p-type, this work is the first step toward developing n-type SnTe thin films.
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| Work Title | Investigation of Sb and Bi doping in SnTe Layers by Molecular Beam Epitaxy |
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| Subtitle | Materials Science |
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| License | CC BY 4.0 (Attribution) |
| Work Type | Dataset |
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| Publication Date | April 10, 2025 |
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| DOI | doi:10.26207/rabb-1524 |
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| Deposited | April 10, 2025 |
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