Modeling the Coverage of MoS2 and WS2 Thin Films using in-situ Spectroscopic Ellipsometry

This data package includes information on sample preparation, growth conditions and in situ and ex situ characterization results for MoS2 and WS2 samples reported in the main body of the manuscript entitled “Modeling the Coverage of MoS2 and WS2 Thin Films using in-situ Spectroscopic Ellipsometry" by E. Houser, T.V. Mc Knight, J.M. Redwing and F.C Peiris. The MoS2 and WS2 samples were grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (system MOCVD2). The data includes recipe files from the MOCVD equipment and data files from atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), spectroscopic ellipsometry (SE) and room temperature photoluminescence and Raman spectroscopy carried out on the samples. SE measurements were obtained in situ in the MOCVD reactor immediately after growth after cooling down and were obtained at the center of the wafer. Ex situ characterization was typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from wafer edge on opposite side to the flat) unless otherwise specified.

All samples grown as part of this study are included in the data package. The sample numbers associated with figures in the main manuscript are as follows:

MoS2: MCV2-220207A-TM, MCV2-220208A-TM, MCV2-220208B-TM, MCV2-220209A-TM

WS2: MCV2-220322A-TM, MCV2-220322B-TM, MCV2-220324A-TM, MCV2-220328A-TM

Citation

Mc Knight, Thomas; Redwing, Joan (2024). Modeling the Coverage of MoS2 and WS2 Thin Films using in-situ Spectroscopic Ellipsometry [Data set]. Scholarsphere. https://doi.org/10.26207/9d0j-0785

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Work Title Modeling the Coverage of MoS2 and WS2 Thin Films using in-situ Spectroscopic Ellipsometry
Subtitle Materials Science
Access
Open Access
Creators
  1. Thomas Mc Knight
  2. Joan Redwing
Keyword
  1. MOCVD
  2. MoS2
  3. WS2
  4. Sapphire
License CC BY 4.0 (Attribution)
Work Type Dataset
Acknowledgments
  1. NSF Cooperative Agreement DMR-2039351
Publisher
  1. 2D Crystal Consortium
Publication Date May 16, 2024
Subject
  1. Materials Science
DOI doi:10.26207/9d0j-0785
Related URLs
Deposited May 16, 2024

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Version 1
published

  • Created
  • Updated
  • Updated Subject, Publisher, Related URLs, and 3 more Show Changes
    Subject
    • Materials Science
    Publisher
    • 2D Crystal Consortium
    Related URLs
    • https://data.2dccmip.org/qicYkXM9MU8M
    Subtitle
    • Materials Science
    Description
    • This data package includes information on sample preparation, growth conditions and in situ and ex situ characterization results for MoS2 and WS2 samples reported in the main body of the manuscript entitled “Modeling the Coverage of MoS2 and WS2 Thin Films using in-situ Spectroscopic Ellipsometry" by E. Houser, T.V. Mc Knight, J.M. Redwing and F.C Peiris. The MoS2 and WS2 samples were grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (system MOCVD2). The data includes recipe files from the MOCVD equipment and data files from atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), spectroscopic ellipsometry (SE) and room temperature photoluminescence and Raman spectroscopy carried out on the samples. SE measurements were obtained in situ in the MOCVD reactor immediately after growth after cool down and were obtained at the center of the wafer. Ex situ characterization was typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from wafer edge on opposite side to the flat) unless otherwise specified.
    • All samples grown as part of this study are included in the data package. The sample numbers associated with figures in the main manuscript are as follows:
    • MoS2: MCV2-220207A-TM, MCV2-220208A-TM, MCV2-220208B-TM, MCV2-220209A-TM
    • WS2: MCV2-220322A-TM, MCV2-220322B-TM, MCV2-220324A-TM, MCV2-220328A-TM
    Publication Date
    • 2024-05-16
  • Updated Acknowledgments Show Changes
    Acknowledgments
    • NSF Cooperative Agreement DMR-2039351
  • Added Creator Thomas Mc Knight
  • Added Creator Joan Redwing
  • Added MCV2-220207A-TM.zip
  • Added MCV2-220208A-TM.zip
  • Added MCV2-220208B-TM.zip
  • Added MCV2-220209A-TM.zip
  • Added MCV2-220322A-TM.zip
  • Added MCV2-220322B-TM.zip
  • Added MCV2-220324A-TM.zip
  • Added MCV2-220328A-TM.zip
  • Added Readme.txt
  • Updated Keyword, Description, License Show Changes
    Keyword
    • MOCVD, MoS2, WS2, Sapphire
    Description
    • This data package includes information on sample preparation, growth conditions and in situ and ex situ characterization results for MoS2 and WS2 samples reported in the main body of the manuscript entitled “Modeling the Coverage of MoS2 and WS2 Thin Films using in-situ Spectroscopic Ellipsometry" by E. Houser, T.V. Mc Knight, J.M. Redwing and F.C Peiris. The MoS2 and WS2 samples were grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (system MOCVD2). The data includes recipe files from the MOCVD equipment and data files from atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), spectroscopic ellipsometry (SE) and room temperature photoluminescence and Raman spectroscopy carried out on the samples. SE measurements were obtained in situ in the MOCVD reactor immediately after growth after cool down and were obtained at the center of the wafer. Ex situ characterization was typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from wafer edge on opposite side to the flat) unless otherwise specified.
    • This data package includes information on sample preparation, growth conditions and in situ and ex situ characterization results for MoS2 and WS2 samples reported in the main body of the manuscript entitled “Modeling the Coverage of MoS2 and WS2 Thin Films using in-situ Spectroscopic Ellipsometry" by E. Houser, T.V. Mc Knight, J.M. Redwing and F.C Peiris. The MoS2 and WS2 samples were grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (system MOCVD2). The data includes recipe files from the MOCVD equipment and data files from atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), spectroscopic ellipsometry (SE) and room temperature photoluminescence and Raman spectroscopy carried out on the samples. SE measurements were obtained in situ in the MOCVD reactor immediately after growth after cooling down and were obtained at the center of the wafer. Ex situ characterization was typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from wafer edge on opposite side to the flat) unless otherwise specified.
    • All samples grown as part of this study are included in the data package. The sample numbers associated with figures in the main manuscript are as follows:
    • MoS2: MCV2-220207A-TM, MCV2-220208A-TM, MCV2-220208B-TM, MCV2-220209A-TM
    • WS2: MCV2-220322A-TM, MCV2-220322B-TM, MCV2-220324A-TM, MCV2-220328A-TM
    License
    • https://creativecommons.org/licenses/by/4.0/
  • Published

Version 2
published

  • Created
  • Updated Related URLs Show Changes
    Related URLs
    • https://data.2dccmip.org/qicYkXM9MU8M
    • https://data.2dccmip.org/qicYkXM9MU8M, https://doi.org/10.60551/a0g5-8n60, https://doi.org/10.60551/a534-xs21
  • Published
  • Updated