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Created
May 16, 2024 09:19
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rkh24
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Updated
May 16, 2024 09:19
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[unknown user]
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Subject, Publisher, Related URLs, and 3 more
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May 16, 2024 09:20
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rkh24
Subject
Publisher
Related URLs
- https://data.2dccmip.org/qicYkXM9MU8M
Subtitle
Description
- This data package includes information on sample preparation, growth conditions and in situ and ex situ characterization results for MoS2 and WS2 samples reported in the main body of the manuscript entitled “Modeling the Coverage of MoS2 and WS2 Thin Films using in-situ Spectroscopic Ellipsometry" by E. Houser, T.V. Mc Knight, J.M. Redwing and F.C Peiris. The MoS2 and WS2 samples were grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (system MOCVD2). The data includes recipe files from the MOCVD equipment and data files from atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), spectroscopic ellipsometry (SE) and room temperature photoluminescence and Raman spectroscopy carried out on the samples. SE measurements were obtained in situ in the MOCVD reactor immediately after growth after cool down and were obtained at the center of the wafer. Ex situ characterization was typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from wafer edge on opposite side to the flat) unless otherwise specified.
- All samples grown as part of this study are included in the data package. The sample numbers associated with figures in the main manuscript are as follows:
- MoS2: MCV2-220207A-TM, MCV2-220208A-TM, MCV2-220208B-TM, MCV2-220209A-TM
- WS2: MCV2-220322A-TM, MCV2-220322B-TM, MCV2-220324A-TM, MCV2-220328A-TM
Publication Date
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May 16, 2024 09:21
by
rkh24
Acknowledgments
- NSF Cooperative Agreement DMR-2039351
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Added Creator Thomas Mc Knight
May 16, 2024 09:21
by
rkh24
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Added Creator Joan Redwing
May 16, 2024 09:21
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rkh24
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Added
MCV2-220207A-TM.zip
May 16, 2024 09:21
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rkh24
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Added
MCV2-220208A-TM.zip
May 16, 2024 09:21
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rkh24
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Added
MCV2-220208B-TM.zip
May 16, 2024 09:21
by
rkh24
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Added
MCV2-220209A-TM.zip
May 16, 2024 09:21
by
rkh24
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Added
MCV2-220322A-TM.zip
May 16, 2024 09:21
by
rkh24
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Added
MCV2-220322B-TM.zip
May 16, 2024 09:21
by
rkh24
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Added
MCV2-220324A-TM.zip
May 16, 2024 09:21
by
rkh24
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Added
MCV2-220328A-TM.zip
May 16, 2024 09:21
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rkh24
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Added
Readme.txt
May 16, 2024 09:21
by
rkh24
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May 16, 2024 09:25
by
rkh24
Keyword
- MOCVD, MoS2, WS2, Sapphire
Description
This data package includes information on sample preparation, growth conditions and in situ and ex situ characterization results for MoS2 and WS2 samples reported in the main body of the manuscript entitled “Modeling the Coverage of MoS2 and WS2 Thin Films using in-situ Spectroscopic Ellipsometry" by E. Houser, T.V. Mc Knight, J.M. Redwing and F.C Peiris. The MoS2 and WS2 samples were grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (system MOCVD2). The data includes recipe files from the MOCVD equipment and data files from atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), spectroscopic ellipsometry (SE) and room temperature photoluminescence and Raman spectroscopy carried out on the samples. SE measurements were obtained in situ in the MOCVD reactor immediately after growth after cool down and were obtained at the center of the wafer. Ex situ characterization was typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from wafer edge on opposite side to the flat) unless otherwise specified.
- This data package includes information on sample preparation, growth conditions and in situ and ex situ characterization results for MoS2 and WS2 samples reported in the main body of the manuscript entitled “Modeling the Coverage of MoS2 and WS2 Thin Films using in-situ Spectroscopic Ellipsometry" by E. Houser, T.V. Mc Knight, J.M. Redwing and F.C Peiris. The MoS2 and WS2 samples were grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (system MOCVD2). The data includes recipe files from the MOCVD equipment and data files from atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), spectroscopic ellipsometry (SE) and room temperature photoluminescence and Raman spectroscopy carried out on the samples. SE measurements were obtained in situ in the MOCVD reactor immediately after growth after cooling down and were obtained at the center of the wafer. Ex situ characterization was typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from wafer edge on opposite side to the flat) unless otherwise specified.
- All samples grown as part of this study are included in the data package. The sample numbers associated with figures in the main manuscript are as follows:
- MoS2: MCV2-220207A-TM, MCV2-220208A-TM, MCV2-220208B-TM, MCV2-220209A-TM
- WS2: MCV2-220322A-TM, MCV2-220322B-TM, MCV2-220324A-TM, MCV2-220328A-TM
License
- https://creativecommons.org/licenses/by/4.0/
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Published
May 16, 2024 09:25
by
rkh24