In Situ Observation of β-Ga 2 O 3 Schottky Diode Failure under Forward Biasing Condition

In this article, we investigate defect nucleation leading to device degradation in \beta -Ga2O3 Schottky barrier diodes by operating them inside a transmission electron microscope. Such in situ approach allows simultaneous visualization and quantitative device characterization, not possible with the current art of postmortem microscopy. High current density and associated mechanical and thermal fields are shown to induce different types of crystal defects, from vacancy cluster and stacking fault to microcrack generation prior to failure. These structural defects can act as traps for carrier and cause device failure at high biasing voltage. Fundamental insights on nucleation of these defects and their evolution are important from materials reliability and device design perspectives.


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Work Title In Situ Observation of β-Ga 2 O 3 Schottky Diode Failure under Forward Biasing Condition
Open Access
  1. Zahabul Islam
  2. Minghan Xian
  3. Aman Haque
  4. Fan Ren
  5. Marko Tadjer
  6. Nicholas Glavin
  7. Stephen Pearton
License In Copyright (Rights Reserved)
Work Type Article
  1. IEEE Transactions on Electron Devices
Publication Date August 1, 2020
Publisher Identifier (DOI)
Deposited November 15, 2021




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Work History

Version 1

  • Created
  • Added Final_Version.docx
  • Added Creator Zahabul Islam
  • Added Creator Minghan Xian
  • Added Creator Aman Haque
  • Added Creator Fan Ren
  • Added Creator Marko Tadjer
  • Added Creator Nicholas Glavin
  • Added Creator Stephen Pearton
  • Published
  • Updated
  • Updated