
MoSe2-WSe2 in-plane heterostructures for exciton confinement
This data package includes information on sample preparation, growth conditions and characterization results for MoSe2-WSe2 in-plane heterostructure samples reported in the main body of the manuscript entitled “Exciton Confinement in Two-Dimensional, In-Plane Quantum Heterostructures," by G. Kim, et al. The MoSe2-WSe2 samples were grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (systems MOCVD1 and MOCVD2). The data includes recipe files from the MOCVD equipment and data files from atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM) and room temperature photoluminescence and Raman spectroscopy carried out on the samples. Characterization was typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from wafer edge on opposite side to the flat) unless otherwise specified.
The sample numbers associated with figures in the main manuscript are as follows:
Figures 1 and 2: MCV1-201006B-BH (5 min)
Figure 3: MCV1-20106B-BH (5 min); MCV1-201006A-BH (10 min); MCV2-220510A-ML (MoSe2 ref); MCV2-220524A-TM (WSe2 ref)
Figure 4: MCV1-201007A-BH (1 min)
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Work Title | MoSe2-WSe2 in-plane heterostructures for exciton confinement |
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Subtitle | Materials Science |
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License | CC BY 4.0 (Attribution) |
Work Type | Dataset |
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Publication Date | July 3, 2024 |
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DOI | doi:10.26207/0ddt-qt82 |
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Deposited | July 03, 2024 |
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