Improved rhenium Schottky diodes to n-type gallium nitride

Rhenium deposited by electron-beam evaporation and sputtering was studied for Schottky contacts to n-type gallium nitride (GaN). Barrier heights were investigated via current-voltage, current-voltage-temperature, and capacitance-voltage measurements. Electron-beam evaporated Au/Re/n-GaN diodes exhibited an average Schottky barrier height (SBH) of 0.78 ± 0.04 eV and ideality factor (n) of 1.02 ± 0.01 as deposited, and 0.81 ± 0.03 eV and 1.02 ± 0.01, respectively, when annealed for 5 min at 400°C. On the other hand, sputtered Re contacts offered poor electrical characteristics as deposited with the SBH = 0.38–0.41 eV and n = 1.26–1.73. They improved when annealed for 5 min at 500°C with a SBH = 0.74 ± <0.01 eV and n = 1.02 ± <0.01, yet the sputtered diodes were not as thermally stable. This study highlights the importance of choices made during fabrication of nominally the same structures that can dramatically affect their performance. Damage introduced during sputter deposition can be healed by annealing, but not completely since thermal stability is compromised.

© 2022. This manuscript version is made available under the CC-BY-NC-ND 4.0 license https://creativecommons.org/licenses/by-nc-nd/4.0/

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Work Title Improved rhenium Schottky diodes to n-type gallium nitride
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Open Access
Creators
  1. Alex Molina
  2. Suzanne E. Mohney
License CC BY-NC-ND 4.0 (Attribution-NonCommercial-NoDerivatives)
Work Type Article
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  1. Materials Science in Semiconductor Processing
Publication Date May 18, 2022
Publisher Identifier (DOI)
  1. https://doi.org/10.1016/j.mssp.2022.106799
Deposited August 01, 2022

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    Work Title
    • Improved rhenium Schottky diodes to n-type gallium nitride
    • ! Improved rhenium Schottky diodes to n-type gallium nitride
    Description
    • <p>Rhenium deposited by electron-beam evaporation and sputtering was studied for Schottky contacts to n-type gallium nitride (GaN). Barrier heights were investigated via current-voltage, current-voltage-temperature, and capacitance-voltage measurements. Electron-beam evaporated Au/Re/n-GaN diodes exhibited an average Schottky barrier height (SBH) of 0.78 ± 0.04 eV and ideality factor (n) of 1.02 ± 0.01 as deposited, and 0.81 ± 0.03 eV and 1.02 ± 0.01, respectively, when annealed for 5 min at 400°C. On the other hand, sputtered Re contacts offered poor electrical characteristics as deposited with the SBH = 0.38–0.41 eV and n = 1.26–1.73. They improved when annealed for 5 min at 500°C with a SBH = 0.74 ± &lt;0.01 eV and n = 1.02 ± &lt;0.01, yet the sputtered diodes were not as thermally stable. This study highlights the importance of choices made during fabrication of nominally the same structures that can dramatically affect their performance. Damage introduced during sputter deposition can be healed by annealing, but not completely since thermal stability is compromised.</p>
    • Rhenium deposited by electron-beam evaporation and sputtering was studied for Schottky contacts to n-type gallium nitride (GaN). Barrier heights were investigated via current-voltage, current-voltage-temperature, and capacitance-voltage measurements. Electron-beam evaporated Au/Re/n-GaN diodes exhibited an average Schottky barrier height (SBH) of 0.78 ± 0.04 eV and ideality factor (n) of 1.02 ± 0.01 as deposited, and 0.81 ± 0.03 eV and 1.02 ± 0.01, respectively, when annealed for 5 min at 400°C. On the other hand, sputtered Re contacts offered poor electrical characteristics as deposited with the SBH = 0.38–0.41 eV and n = 1.26–1.73. They improved when annealed for 5 min at 500°C with a SBH = 0.74 ± &lt;0.01 eV and n = 1.02 ± &lt;0.01, yet the sputtered diodes were not as thermally stable. This study highlights the importance of choices made during fabrication of nominally the same structures that can dramatically affect their performance. Damage introduced during sputter deposition can be healed by annealing, but not completely since thermal stability is compromised.
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    • https://creativecommons.org/licenses/by-nc-nd/4.0/
  • Updated Work Title Show Changes
    Work Title
    • ! Improved rhenium Schottky diodes to n-type gallium nitride
    • Improved rhenium Schottky diodes to n-type gallium nitride
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