Wafer-scale MOCVD TMD films used for 3D Monolithic Integration
This data package includes information on growth conditions and characterization results for TMD films used in the fabrication of 3D monolithic integrated circuits by Prof. Saptarshi Das' group at Penn State. The TMD films include MoS2 and WSe2 monolayer and bilayer films grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility. The data includes recipe files from the MOCVD equipment and data files from atomic force microscopy (AFM) and room temperature photoluminescence and Raman spectroscopy carried out on the samples. Characterization is typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from wafer edge on opposite side to the flat).
Joan Redwing jmr31@psu.edu 5/3/2023
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Work Title | Wafer-scale MOCVD TMD films used for 3D Monolithic Integration |
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Subtitle | Materials Science |
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License | CC BY 4.0 (Attribution) |
Work Type | Dataset |
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Publication Date | May 3, 2023 |
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DOI | doi:10.26207/khwb-rr73 |
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Deposited | May 08, 2023 |
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