WSe2 on c-plane sapphire with preferred orientation grown by MOCVD

This data package includes information on sample preparation, growth conditions and characterization results for WSe2 samples reported in the main body of the manuscript entitled “Step engineering for nucleation and domain orientation control in WSe2 epitaxy on c-plane sapphire” by H. Zhu, et al. The WSe2 samples were grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (systems MOCVD1 and MOCVD2). The data includes recipe files from the MOCVD equipment and data files from atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM) and room temperature photoluminescence and Raman spectroscopy carried out on the samples. Characterization was typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from wafer edge on opposite side to the flat) unless otherwise specified.

All samples grown as part of this study are included in the data package. The sample numbers associated with figures in the main manuscript are as follows:

Figure 1 MCV1-200316A-HZ, MCV1-200814A-HZ, MCV1-200813A-HZ, MCV1-200313A-HZ, MCV1-200312A-HZ Figure 2 MCV2-200914A-TM, 2009004A-TM Figure 3 MCV1-200311A-HZ, MCV1-200310A-HZ Figure 4 MCV2-210723A-KY, MCV1-211005A-TM Figure 5 MCV1-200311A-HZ, MCV1-200316A-HZ, MCV1-200309A-HZ Figure 6 MCV1-200722A-HZ

Additional details are provided in the 2DCC LiST database: http://data.2dccmip.org/10.26207/f7b1-fs46

Joan Redwing jmr31@psu.edu 5/25/23

Citation

Redwing, Joan; Zhu, Haoyue ; Choudhury, Tanushree ; Mc Knight, Thomas; Trainor, Nicholas; Huet, Benjamin (2023). WSe2 on c-plane sapphire with preferred orientation grown by MOCVD [Data set]. Scholarsphere. https://doi.org/10.26207/f7b1-fs46

Files

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Metadata

Work Title WSe2 on c-plane sapphire with preferred orientation grown by MOCVD
Subtitle Materials Science
Access
Open Access
Creators
  1. Joan Redwing
  2. Haoyue Zhu
  3. Tanushree Choudhury
  4. Thomas Mc Knight
  5. Nicholas Trainor
  6. Benjamin Huet
Keyword
  1. MOCVD
  2. WSe2
  3. Sapphire
License CC BY 4.0 (Attribution)
Work Type Dataset
Acknowledgments
  1. NSF Cooperative Agreement DMR-2039351
Publisher
  1. 2D Crystal Consortium
Publication Date May 25, 2023
Subject
  1. Materials Science
DOI doi:10.26207/f7b1-fs46
Related URLs
Deposited May 26, 2023

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Work History

Version 1
published

  • Created
  • Updated
  • Updated Acknowledgments Show Changes
    Acknowledgments
    • NSF Cooperative Agreement DMR-2039351
  • Added Creator Joan Redwing
  • Added Creator Haoyue Zhu
  • Added Creator Tanushree Choudhury
  • Added Creator Thomas Mc Knight
  • Added Creator Nicholas Trainor
  • Added Creator Benjamin Huet
  • Added MCV1-191125A-HZ.zip
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  • Updated License Show Changes
    License
    • https://creativecommons.org/licenses/by/4.0/
  • Published
  • Updated

Version 2
published

  • Created
  • Updated Description, Related URLs Show Changes
    Description
    • This data package includes information on sample preparation, growth conditions and characterization results for WSe2 samples reported in the main body of the manuscript entitled “Step engineering for nucleation and domain orientation control in WSe2 epitaxy on c-plane sapphire” by H. Zhu, et al. The WSe2 samples were grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (systems MOCVD1 and MOCVD2). The data includes recipe files from the MOCVD equipment and data files from atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM) and room temperature photoluminescence and Raman spectroscopy carried out on the samples. Characterization was typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from wafer edge on opposite side to the flat) unless otherwise specified.
    • All samples grown as part of this study are included in the data package. The sample numbers associated with figures in the main manuscript are as follows:
    • Figure 1 MCV1-200316A-HZ, MCV1-200814A-HZ, MCV1-200813A-HZ, MCV1-200313A-HZ, MCV1-200312A-HZ
    • Figure 2 MCV2-200914A-TM, 2009004A-TM
    • Figure 3 MCV1-200311A-HZ, MCV1-200310A-HZ
    • Figure 4 MCV2-210723A-KY, MCV1-211005A-TM
    • Figure 5 MCV1-200311A-HZ, MCV1-200316A-HZ, MCV1-200309A-HZ
    • Figure 6 MCV1-200722A-HZ
    • Additional details are provided in the 2DCC LiST database: ADD LiST URL HERE
    • Additional details are provided in the 2DCC LiST database: https://m4-2dcc.vmhost.psu.edu/list/data/10.26207/f7b1-fs46
    • Joan Redwing jmr31@psu.edu 5/25/23
    Related URLs
    • https://m4-2dcc.vmhost.psu.edu/list/data/10.26207/f7b1-fs46
  • Published
  • Updated

Version 3
published

  • Created
  • Updated Description Show Changes
    Description
    • This data package includes information on sample preparation, growth conditions and characterization results for WSe2 samples reported in the main body of the manuscript entitled “Step engineering for nucleation and domain orientation control in WSe2 epitaxy on c-plane sapphire” by H. Zhu, et al. The WSe2 samples were grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (systems MOCVD1 and MOCVD2). The data includes recipe files from the MOCVD equipment and data files from atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM) and room temperature photoluminescence and Raman spectroscopy carried out on the samples. Characterization was typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from wafer edge on opposite side to the flat) unless otherwise specified.
    • All samples grown as part of this study are included in the data package. The sample numbers associated with figures in the main manuscript are as follows:
    • Figure 1 MCV1-200316A-HZ, MCV1-200814A-HZ, MCV1-200813A-HZ, MCV1-200313A-HZ, MCV1-200312A-HZ
    • Figure 2 MCV2-200914A-TM, 2009004A-TM
    • Figure 3 MCV1-200311A-HZ, MCV1-200310A-HZ
    • Figure 4 MCV2-210723A-KY, MCV1-211005A-TM
    • Figure 5 MCV1-200311A-HZ, MCV1-200316A-HZ, MCV1-200309A-HZ
    • Figure 6 MCV1-200722A-HZ
    • Additional details are provided in the 2DCC LiST database: https://m4-2dcc.vmhost.psu.edu/list/data/10.26207/f7b1-fs46
    • Joan Redwing jmr31@psu.edu 5/25/23
  • Published
  • Updated

Version 4
published

  • Created
  • Updated Related URLs Show Changes
    Related URLs
    • https://m4-2dcc.vmhost.psu.edu/list/data/10.26207/f7b1-fs46
    • http://data.2dccmip.org/10.26207/f7b1-fs46
  • Published
  • Updated

Version 5
published

  • Created
  • Updated Description Show Changes
    Description
    • This data package includes information on sample preparation, growth conditions and characterization results for WSe2 samples reported in the main body of the manuscript entitled “Step engineering for nucleation and domain orientation control in WSe2 epitaxy on c-plane sapphire” by H. Zhu, et al. The WSe2 samples were grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (systems MOCVD1 and MOCVD2). The data includes recipe files from the MOCVD equipment and data files from atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM) and room temperature photoluminescence and Raman spectroscopy carried out on the samples. Characterization was typically done at the center of the 2" wafer and near the wafer edge (approximately 5 mm from wafer edge on opposite side to the flat) unless otherwise specified.
    • All samples grown as part of this study are included in the data package. The sample numbers associated with figures in the main manuscript are as follows:
    • Figure 1 MCV1-200316A-HZ, MCV1-200814A-HZ, MCV1-200813A-HZ, MCV1-200313A-HZ, MCV1-200312A-HZ
    • Figure 2 MCV2-200914A-TM, 2009004A-TM
    • Figure 3 MCV1-200311A-HZ, MCV1-200310A-HZ
    • Figure 4 MCV2-210723A-KY, MCV1-211005A-TM
    • Figure 5 MCV1-200311A-HZ, MCV1-200316A-HZ, MCV1-200309A-HZ
    • Figure 6 MCV1-200722A-HZ
    • Additional details are provided in the 2DCC LiST database: https://m4-2dcc.vmhost.psu.edu/list/data/10.26207/f7b1-fs46
    • Additional details are provided in the 2DCC LiST database: http://data.2dccmip.org/10.26207/f7b1-fs46
    • Joan Redwing jmr31@psu.edu 5/25/23
  • Published
  • Updated