Quasi-van der Waals Epitaxial Growth of Gamma'-GaSe Nanometer-Thick Films on GaAs(111)B Substrates

GaSe is an important member of the post-transition metal chalcogenide family and is an emerging two-dimensional (2D) semiconductor material. Because it is a van der Waals (vdW) material, it can be fabricated into atomic-scale ultrathin films, making it suitable for the preparation of compact, heterostructure devices. In addition, GaSe possesses unusual optical and electronic properties, such as a shift from an indirect-bandgap single-layer film to a direct-bandgap bulk material, rare intrinsic p-type conduction, and nonlinear optical behaviors. These properties make GaSe an appealing candidate for the fabrication of field-effect transistors, photodetectors, and photovoltaics. However, the wafer-scale production of pure GaSe single crystal thin films remains challenging. This study develops an approach for the direct growth of GaSe thin films on GaAs substrates using molecular beam epitaxy. It yields smooth thin GaSe films with a γ'-configuration, a recently-proposed novel polymorph. We analyze the formation mechanism of γ'-GaSe using density functional theory, finding that this polymorph is stabilized by Ga vacancies. Finally, we investigate the growth conditions of GaSe, providing valuable insights for exploring 2D/3D quasi-vdW epitaxial growth.

Citation

Yu, Mingyu; Iddawela, Sahani; Thompson, Jessica; Wang, Jiayang (2024). Quasi-van der Waals Epitaxial Growth of Gamma'-GaSe Nanometer-Thick Films on GaAs(111)B Substrates [Data set]. Scholarsphere. https://doi.org/10.26207/pgtf-5570

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Work Title Quasi-van der Waals Epitaxial Growth of Gamma'-GaSe Nanometer-Thick Films on GaAs(111)B Substrates
Subtitle Materials Science
Access
Open Access
Creators
  1. Mingyu Yu
  2. Sahani Iddawela
  3. Jessica Thompson
  4. Jiayang Wang
Keyword
  1. MBE
  2. GaSe
License CC BY 4.0 (Attribution)
Work Type Dataset
Acknowledgments
  1. NSF Cooperative Agreement DMR-2039351
Publisher
  1. 2D Crystal Consortium
Publication Date May 23, 2024
Subject
  1. Materials Science
DOI doi:10.26207/pgtf-5570
Related URLs
Deposited May 23, 2024

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Version 1
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  • Updated Description, Publication Date Show Changes
    Description
    • GaSe is an important member of the post-transition metal chalcogenide family and is an emerging two-dimensional (2D) semiconductor material. Because it is a van der Waals (vdW) material, it can be fabricated into atomic-scale ultrathin films, making it suitable for the preparation of compact, heterostructure devices. In addition, GaSe possesses unusual optical and electronic properties, such as a shift from an indirect-bandgap single-layer film to a direct-bandgap bulk material, rare intrinsic p-type conduction, and nonlinear optical behaviors. These properties make GaSe an appealing candidate for the fabrication of field-effect transistors, photodetectors, and photovoltaics. However, the wafer-scale production of pure GaSe single crystal thin films remains challenging. This study develops an approach for the direct growth of GaSe thin films on GaAs substrates using molecular beam epitaxy. It yields smooth thin GaSe films with a γ'-configuration, a recently-proposed novel polymorph. We analyze the formation mechanism of γ'-GaSe using density functional theory, finding that this polymorph is stabilized by Ga vacancies. Finally, we investigate the growth conditions of GaSe, providing valuable insights for exploring 2D/3D quasi-vdW epitaxial growth.
    Publication Date
    • 2024-05-23
  • Updated Acknowledgments Show Changes
    Acknowledgments
    • NSF Cooperative Agreement DMR-2039351
  • Added Creator Mingyu Yu
  • Added Creator Sahani Iddawela
  • Added Creator Jessica Thompson
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  • Added Readme.txt
  • Updated Keyword, Subject, Subtitle, and 3 more Show Changes
    Keyword
    • MBE, GaSe
    Subject
    • Materials Science
    Subtitle
    • Materials Science
    Publisher
    • 2D Crystal Consortium
    Related URLs
    • https://data.2dccmip.org/5GNLYLjl1SbF, https://doi.org/10.60551/gqq8-yj90
    License
    • https://creativecommons.org/licenses/by/4.0/
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Version 3
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    Work Title
    • Quasi-van der Waals Epitaxial Growth of Gamma'-GaSe Films on GaAs(111)B Substrates
    • Quasi-van der Waals Epitaxial Growth of Gamma'-GaSe Nanometer-Thick Films on GaAs(111)B Substrates
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Version 4
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