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Created
August 10, 2022 13:46
by
sle34
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Updated
August 10, 2022 13:46
by
[unknown user]
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Added Creator Sandra Elder
August 10, 2022 13:46
by
sle34
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Added
Mechanically Induced Ferroelectric Switching in BaTiO3 Thin Films.pdf
August 10, 2022 13:48
by
sle34
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August 10, 2022 13:48
by
sle34
License
- https://rightsstatements.org/page/InC/1.0/
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Published
August 10, 2022 13:48
by
sle34
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Updated
Publisher, Publisher Identifier (DOI), Description, and 1 more
Show Changes
September 16, 2023 09:09
by
avs5190
Publisher
Publisher Identifier (DOI)
- https://doi.org/10.1016/j.actamat.2020.04.032
Description
The ability to reverse or switching the polarization of a ferroelectric thin film through a mechanical
force under an atomic force microscopy (AFM) tip offers the exciting possibility of a voltage-free
control of ferroelectricity. One of the important metrics for characterizing such a switching process
is the critical force Fc required to reverse a polarization. However, the experimentally measured
values of Fc display a large uncertainty and vary significantly even for the same ferroelectric film.
Here, using BaTiO3 thin films as a model system, we systematically evaluate Fc using a
combination of AFM-based experiments and phase-field simulations. In particular, we study the
influence of the AFM tip radius, misfit strain, and film thickness on Fc as well as the interplay
between the flexoelectric and piezoelectric effects. This work provides a deeper understanding on
the mechanism and control of mechanically induced ferroelectric switching and thus guidance for
exploring potential ferroelectric-based nanodevices based on mechanical switching.
- The ability to reverse or switching the polarization of a ferroelectric thin film through a mechanical force under an atomic force microscopy (AFM) tip offers the exciting possibility of a voltage-free control of ferroelectricity. One of the important metrics for characterizing such a switching process is the critical force Fc required to reverse a polarization. However, the experimentally measured values of Fc display a large uncertainty and vary significantly even for the same ferroelectric film. Here, using BaTiO3 thin films as a model system, we systematically evaluate Fc using a combination of AFM-based experiments and phase-field simulations. In particular, we study the influence of the AFM tip radius, misfit strain, and film thickness on Fc as well as the interplay
- between the flexoelectric and piezoelectric effects. This work provides a deeper understanding on the mechanism and control of mechanically induced ferroelectric switching and thus guidance for exploring potential ferroelectric-based nanodevices based on mechanical switching.
Publication Date
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Deleted Creator Sandra Elder
September 16, 2023 09:10
by
avs5190
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Added Creator Bo Wang
September 16, 2023 09:10
by
avs5190
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Added Creator Haidong Lu
September 16, 2023 09:10
by
avs5190
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Added Creator Chung Wung Bark
September 16, 2023 09:10
by
avs5190
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Added Creator Chang-Beom Eom
September 16, 2023 09:10
by
avs5190
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Added Creator Alexei Gruverman
September 16, 2023 09:10
by
avs5190
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Added Creator Long-Qing Chen
September 16, 2023 09:10
by
avs5190
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Updated
April 04, 2024 10:21
by
[unknown user]