
Molybdenum Carbonitride Deposited by Plasma Atomic Layer Deposition as a Schottky Contact to Gallium Nitride
This is the author’s peer reviewed, accepted manuscript. However, the online version of record will be different from this version once it has been copyedited and typeset.
PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0062140
Abstract: Molybdenum carbonitride films prepared by plasma enhanced atomic layer deposition were studied for use as Schottky contacts to n-type gallium nitride. Deposited using bis(tertbutylimino)bis(dimethylamino)molybdenum and a remote plasma N2/H2 plasma, the diodes capped with Ti/Au displayed excellent rectifying behavior with a barrier height of 0.87 ± 0.01 eV and an ideality factor of 1.02 ± 0.01 after annealing at 600 °C in N2. These characteristics surpass those of pure metal nitride Schottky diodes, possibly due to work function engineering due to the incorporation of C and use of a remote plasma to avoid process-induced defects. According to x-ray photoelectron spectroscopy and energy-dispersive x-ray spectroscopy, the film composition is approximately MoC0.3N0.7. Grazing incidence x-ray diffraction and plan-view transmission electron microscopy selected area electron diffraction are consistent with a rock salt structure with a lattice parameter of 0.42 nm.
Files
Metadata
Work Title | Molybdenum Carbonitride Deposited by Plasma Atomic Layer Deposition as a Schottky Contact to Gallium Nitride |
---|---|
Access | |
Creators |
|
Keyword |
|
License | In Copyright (Rights Reserved) |
Work Type | Article |
Acknowledgments |
|
Publisher |
|
Publication Date | September 8, 2021 |
Language |
|
Publisher Identifier (DOI) |
|
Deposited | December 21, 2021 |
Versions
Analytics
Collections
This resource is currently not in any collection.