Molybdenum Carbonitride Deposited by Plasma Atomic Layer Deposition as a Schottky Contact to Gallium Nitride

This is the author’s peer reviewed, accepted manuscript. However, the online version of record will be different from this version once it has been copyedited and typeset.

PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0062140

Abstract: Molybdenum carbonitride films prepared by plasma enhanced atomic layer deposition were studied for use as Schottky contacts to n-type gallium nitride. Deposited using bis(tertbutylimino)bis(dimethylamino)molybdenum and a remote plasma N2/H2 plasma, the diodes capped with Ti/Au displayed excellent rectifying behavior with a barrier height of 0.87 ± 0.01 eV and an ideality factor of 1.02 ± 0.01 after annealing at 600 °C in N2. These characteristics surpass those of pure metal nitride Schottky diodes, possibly due to work function engineering due to the incorporation of C and use of a remote plasma to avoid process-induced defects. According to x-ray photoelectron spectroscopy and energy-dispersive x-ray spectroscopy, the film composition is approximately MoC0.3N0.7. Grazing incidence x-ray diffraction and plan-view transmission electron microscopy selected area electron diffraction are consistent with a rock salt structure with a lattice parameter of 0.42 nm.

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Work Title Molybdenum Carbonitride Deposited by Plasma Atomic Layer Deposition as a Schottky Contact to Gallium Nitride
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Open Access
Creators
  1. Alex Molina
  2. Ian Edward Campbell
  3. Timothy N. Walter
  4. Ama Agyapong
  5. Suzanne Mohney
Keyword
  1. Atomic layer deposition
  2. Molybdenum nitride
  3. Molybdenum carbonitride
  4. Gallium nitride
  5. GaN
  6. Schottky barrier
License In Copyright (Rights Reserved)
Work Type Article
Acknowledgments
  1. The authors are grateful to Andrew Allerman (Sandia National Laboratories) for providing GaN epilayers. The authors are also grateful to Jennifer Gray in the Penn State Materials Characterization Laboratory for imaging the cross-sectional TEM sample and Jeffrey Shallenberger for helpful discussions about XPS. This work was funded by the Office of Naval Research under Grant N000141812360. AM would also like to thank the Alfred P. Sloan Foundation for additional partial support through the Sloan Minority Ph.D. Program (MPHD).
Publisher
  1. Applied Physics Letters
Publication Date September 8, 2021
Language
  1. English
Publisher Identifier (DOI)
  1. https://doi.org/10.1063/5.0062140
Deposited December 21, 2021

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Version 1
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  • Created
  • Updated Acknowledgments Show Changes
    Acknowledgments
    • The authors are grateful to Andrew Allerman (Sandia National Laboratories) for providing GaN epilayers. The authors are also grateful to Jennifer Gray in the Penn State Materials Characterization Laboratory for imaging the cross-sectional TEM sample and Jeffrey Shallenberger for helpful discussions about XPS. This work was funded by the Office of Naval Research under Grant N000141812360. AM would also like to thank the Alfred P. Sloan Foundation for additional partial support through the Sloan Minority Ph.D. Program (MPHD).
  • Added Creator Suzanne Mohney
  • Added Molybdenum Carbonitride Deposited by Plasma Atomic Layer Deposition as a Schottky Contact to Gallium Nitride.pdf
  • Added Creator Alex Molina
  • Added Creator Ian Edward Campbell
  • Added Creator Ama Agyapong
  • Added Creator Timothy N. Walter
  • Updated Creator Alex Molina
  • Updated Creator Suzanne Mohney
  • Updated Creator Ian Edward Campbell
  • Updated Creator Timothy N. Walter
  • Updated License Show Changes
    License
    • https://rightsstatements.org/page/InC/1.0/
  • Published
  • Updated
  • Updated Keyword, Publisher Identifier (DOI), Description, and 2 more Show Changes
    Keyword
    • atomic layer deposition, molybdenum nitride, molybdenum carbonitride, gallium nitride, GaN, Schottky barrier
    • Atomic layer deposition, Molybdenum nitride, Molybdenum carbonitride, Gallium nitride, GaN, Schottky barrier
    Publisher Identifier (DOI)
    • 10.1063/5.0062140
    • https://doi.org/10.1063/5.0062140
    Description
    • This is the author’s peer reviewed, accepted manuscript. However, the online version of record will be different from this version once it has been copyedited and typeset.
    • PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0062140
    • PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0062140
    • Abstract: Molybdenum carbonitride films prepared by plasma enhanced atomic layer deposition were studied for use as Schottky contacts to n-type gallium nitride. Deposited using bis(tertbutylimino)bis(dimethylamino)molybdenum and a remote plasma N2/H2 plasma, the diodes capped with Ti/Au displayed excellent rectifying behavior with a barrier height of 0.87 ± 0.01 eV and an ideality factor of 1.02 ± 0.01 after annealing at 600 °C in N2. These characteristics surpass those of pure metal nitride Schottky diodes, possibly due to work function engineering due to the incorporation of C and use of a remote plasma to avoid process-induced defects. According to x-ray photoelectron spectroscopy and energy-dispersive x-ray spectroscopy, the film composition is approximately MoC0.3N0.7. Grazing incidence x-ray diffraction and plan-view transmission electron microscopy selected area electron diffraction are consistent with a rock salt structure with a lattice parameter of 0.42 nm.
    Publication Date
    • 2021
    • 2021-09-08
    Publisher's Statement
    • This is the author’s peer reviewed, accepted manuscript. However, the online version of record will be different from this version once it has been copyedited and typeset.
    • PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0062140
  • Updated