Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors

This data package includes information on sample preparation, growth conditions and characterization results for MoS2 samples reported in the main body of the manuscript entitled “Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors" by Muhtasim Ul Karim Sadaf, Ziheng Chen, Shiva Subbulakshmi Radhakrishnan, Yongwen Sun, Lei Ding, Andrew R. Graves, Yang Yang, Joan M. Redwing, and Saptarshi Das. The samples were grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (system MOCVD2). The data includes recipe files from the MOCVD equipment and data files from atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), room temperature photoluminescence and Raman spectroscopy carried out on the samples.

All samples grown as part of this study are included in the data package. The sample numbers associated with figures in the main manuscript are as follows: MCV2-231209A-AG.1

Citation

Graves, Andrew (2025). Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors [Data set]. Scholarsphere. https://doi.org/10.26207/wzya-dt31

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Work Title Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors
Subtitle Materials Science
Access
Open Access
Creators
  1. Andrew Graves
Keyword
  1. Materials Science
  2. MOCVD
  3. 2D
  4. TMD
  5. SRAM
License CC BY 4.0 (Attribution)
Work Type Dataset
Acknowledgments
  1. NSF Cooperative Agreement DMR-2039351
Publisher
  1. 2D Crystal Consortium
Publication Date May 15, 2025
Subject
  1. Materials Science
DOI doi:10.26207/wzya-dt31
Related URLs
Deposited May 15, 2025

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Version 1
published

  • Created
  • Updated
  • Updated Keyword, Subject, Publisher, and 4 more Show Changes
    Keyword
    • Materials Science, MOCVD, 2D, TMD, SRAM
    Subject
    • Materials Science
    Publisher
    • 2D Crystal Consortium
    Related URLs
    • https://data.2dccmip.org/1laXaC66MIk6, https://doi.org/10.60551/a0g5-8n60, https://doi.org/10.60551/0w4q-5h15, https://doi.org/10.60551/a534-xs21, https://doi.org/10.60551/y264-bb90
    Subtitle
    • Materials Science
    Description
    • This data package includes information on sample preparation, growth conditions and characterization results for MoS2 samples reported in the main body of the manuscript entitled “Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors" by Muhtasim Ul Karim Sadaf, Ziheng Chen, Shiva Subbulakshmi Radhakrishnan, Yongwen Sun, Lei Ding, Andrew R. Graves, Yang Yang, Joan M. Redwing, and Saptarshi Das. The samples were grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (system MOCVD2). The data includes recipe files from the MOCVD equipment and data files from atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), room temperature photoluminescence and Raman spectroscopy carried out on the samples.
    • All samples grown as part of this study are included in the data package. The sample numbers associated with figures in the main manuscript are as follows: MCV2-231209A-AG.1
    Publication Date
    • 2025-05-15
  • Updated Acknowledgments Show Changes
    Acknowledgments
    • NSF Cooperative Agreement DMR-2039351
  • Added Creator Andrew Graves
  • Added MCV2-231209A-AG.zip
  • Added Readme.txt
  • Updated License Show Changes
    License
    • https://creativecommons.org/licenses/by/4.0/
  • Published
  • Updated