Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors
This data package includes information on sample preparation, growth conditions and characterization results for MoS2 samples reported in the main body of the manuscript entitled “Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors" by Muhtasim Ul Karim Sadaf, Ziheng Chen, Shiva Subbulakshmi Radhakrishnan, Yongwen Sun, Lei Ding, Andrew R. Graves, Yang Yang, Joan M. Redwing, and Saptarshi Das. The samples were grown by metalorganic chemical vapor deposition (MOCVD) on 2" c-plane sapphire substrates in the NSF 2D Crystal Consortium facility at Penn State (system MOCVD2). The data includes recipe files from the MOCVD equipment and data files from atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), room temperature photoluminescence and Raman spectroscopy carried out on the samples.
All samples grown as part of this study are included in the data package. The sample numbers associated with figures in the main manuscript are as follows: MCV2-231209A-AG.1
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Work Title | Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors |
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Subtitle | Materials Science |
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License | CC BY 4.0 (Attribution) |
Work Type | Dataset |
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Publication Date | May 15, 2025 |
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DOI | doi:10.26207/wzya-dt31 |
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Deposited | May 15, 2025 |
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