
Study of the Layer Transfer and Characterization of CVD-Grown Hexagonal Boron Nitride Films for Single Photon Emitters Applications
Two-dimensional hexagonal boron nitride (hBN) is a wide band gap semiconductor material which is suitable for several technologies. In recent years, 2D hBN has appeared as a viable platform to produce bright and stable single photon emitters (SPEs) at room temperature, which are in demand for quantum technologies. However, most of the work has focused on exfoliated hBN flakes, which are limited in size and difficult to use for practical applications. In this work, we investigated photon emitters (PEs) in a large-scale multilayer hBN films grown by chemical vapor deposition (CVD) on 2’’ Al2O3 substrate. We characterized the hBN films by a combination of atomic force microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and photoluminescence spectroscopy to assess the PEs properties.
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Work Title | Study of the Layer Transfer and Characterization of CVD-Grown Hexagonal Boron Nitride Films for Single Photon Emitters Applications |
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License | No Copyright - U.S. |
Work Type | Research Paper |
Publication Date | July 2022 |
Deposited | October 10, 2023 |